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Partno	Mfg	Dc	Qty	Available	Descript
STPS80H100TV	ST	N/a	101	avai	Schottky Rectifier

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STPS80H100TV
Schottky Rectifier
STPS80H100TV
July 1999 - Ed: 3A
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER
High voltage dual Schottky barrier rectifier
designed for high frequency telecom and
computer Switched Mode Power Supplies
and other power converters.
Packaged in ISOTOP, this device is intended for
use in medium voltage operation, and particu-
larly, in high frequency circuitries where low
switching losses and low noise are required.
DESCRIPTION
ABSOLUTE RATINGS (limiting values, per diode)
MAIN PRODUCT CHARACTERISTICS
NEGLIGIBLE SWITCHING LOSSES
HIGH JUNCTION TEMPERATURE CAPABILITY
LOW LEAKAGE CURRENT
GOOD TRADE OFF BETWEEN LEAKAGE CUR-
RENT AND FORWARD VOLTAGE DROP
AVALANCHE RATED
LOW INDUCTANCE PACKAGE
INSULATED PACKAGE :
Insulated voltage = 2500 V(RMS)
Capacitance = 45 pF
FEATURES AND BENEFITS
* : dPtot
dTj < 1
Rth(j−a) thermal runaway condition for a diode on its own heatsink
1/4
THERMAL RESISTANCES
STATIC ELECTRICAL CHARACTERISTICS (per diode)
Pulse test : * tp = 5 ms, δ < 2%
** tp = 380 μs, δ < 2%
To evaluate the maximum conduction losses use the following equation :
P = 0.56 x IF(AV) + 0.0022 x IF2 (RMS) 5 10 15 20 25 30 35 40 45 500
PF(av)(W)
Fig. 1: Average forward power dissipation versus
average forward current (per diode). 25 50 75 100 125 1500
IF(av)(A)
Fig. 2: Average forward current versus ambient
temperature (δ=0.5, per diode).
When the diodes 1 and 2 are used simultaneously :
Δ Tj(diode 1) = P(diode1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c)
STPS80H100TV
2/4
1E-3 1E-2 1E-1 1E+00
IM(A)
Fig. 3: Non repetitive surge peak forward current
versus overload duration (maximum values, per diode). 1020 304050 60 708090 1001E-1
1E+0
1E+1
1E+2
1E+3
1E+4
IR(μA)
Fig. 5: Reverse leakage current versus reverse
voltage applied (typical values, per diode).
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.01
IFM(A)
Fig. 7: Forward voltage drop versus forward
current (maximum values, per diode).
1E-3 1E-2 1E-1 1E+0 5E+00.0
Zth(j-c)/Rth(j-c)
Fig. 4: Relative variation of thermal impedance
junction to case versus pulse duration (per diode). 2 5 10 20 50 1000.1
C(nF)
Fig. 6: Junction capacitance versus reverse
voltage applied (typical values, per diode).
STPS80H100TV
3/4
. consequences of
use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by
implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change without notice. This publication supersedes and replaces all information previously supplied.
STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written ap-
proval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics
© 1999 STMicroelectronics - Printed in Italy - All rights reserved.
STMicroelectronics GROUP OF COMPANIES
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PACKAGE MECHANICAL DATA
ISOTOPTM
Cooling method: C
Recommended torque value: 1.3 N.m.
Maximum torque value: 1.5 N.m.
Epoxy meets UL94,V0
STPS80H100TV
4/4
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