STPS80170CW ,High Voltage Power Schottky RectifierFEATURES AND BENEFITS■ High junction temperature capabilityA2K■ Low leakage currentA1■ Good trade o ..
STPS80H100CY ,HIGH VOLTAGE POWER SCHOTTKY RECTIFIERFEATURES AND BENEFITSHIGH REVERSE VOLTAGEA2NEGLIGIBLE SWITCHING LOSSESKLOW FORWARD VOLTAGE DROPA1LO ..
STPS80H100TV ,Schottky RectifierFEATURES AND BENEFITSNEGLIGIBLE SWITCHING LOSSESHIGH JUNCTION TEMPERATURE CAPABILITYLOW LEAKAGE CUR ..
STPS80L15CY ,LOW DROP OR-ing POWER SCHOTTKY RECTIFIERFEATURES AND BENEFITSA2KMax247 PACKAGE, DUAL DIODEA1CONSTRUCTION, 2 x 40A15V BLOCKING VOLTAGE SUITA ..
STPS80L15TV ,Schottky RectifierFEATURES AND BENEFITSVERY LOW DROP FORWARD VOLTAGE FORA2LESS POWER DISSIPATION AND REDUCEDHEATSINKI ..
STPS80L30CY ,LOW DROP POWER SCHOTTKY RECTIFIERapplications.ABSOLUTE RATINGS (limiting values, per diode)Symbol Parameter Value UnitV Repetitive p ..
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STPS80170CW
High Voltage Power Schottky Rectifier
1/6
Table 1: Main Product Characteristics
STPS80170CHIGH VOLTAGE POWER SCHOTTKY RECTIFIER
REV. 1
September 2005
FEATURES AND BENEFITS High junction temperature capability Low leakage current Good trade off between leakage current and
forward voltage drop Low thermal resistance High frequency operation Avalanche specification
DESCRIPTIONDual center tab Schottky rectifier suited for High
Frequency Switched Mode Power Supplies.
Packaged in TO-247, this device is intended for
use to enhance the reliability of the application.
Table 2: Order Code
Table 3: Absolute Ratings (limiting values, per diode)* :
STPS80170C
Table 4: Thermal Parameters
Table 5: Static Electrical Characteristics (per diode)Pulse test: * tp = 5 ms, δ < 2%
** tp = 380 µs, δ < 2%
To evaluate the conduction losses use the following equation: P = 0.62 x I F(AV) + 0.003 IF2 (RMS)
When the diodes 1 and 2 are used simultaneously:
∆ Tj(diode 1) = P(diode 1) x R th(j-c) (Per diode) + P(diode 2) x R th(c)
STPS80170C3/6
Figure 1: Average forward power dissipation
versus average forward current (per diode)
Figure 2: Average forward current versus
ambient temperature (δ = 0.5, per diode)
Figure 3: Normalized avalanche power
derating versus pulse duration
Figure 4: Normalized avalanche power
Figure 5: Non repetitive surge peak forward
current versus overload duration (maximum
values, per diode)
Figure 6: Relative variation of thermal
impedance junction to case versus pulse
duration
STPS80170C
Figure 7: Reverse leakage current versus
reverse voltage applied (typical values, per
diode)
Figure 8: Junction capacitance versus reverse
voltage applied (typical values, per diode)
Figure 9: Forward voltage drop versus forward
current (per diode, low level)
Figure 10: Forward voltage drop versus
forward current (per diode, high level)
STPS80170C5/6
Figure 11: TO-247 Package Mechanical DataIn order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These
packages have a Lead-free second level interconnect . The category of second level interconnect is
marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The
maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an
ST trademark. ECOPACK specifications are available at: .
Table 6: Ordering Information Epoxy meets UL94, V0 Cooling method: by conduction (C) Recommended torque value: 0.8 Nm. Maximum torque value: 1.0 Nm.
Table 7: Revision History
STPS80170C. consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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