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STPS745-STPS745G-TR
POWER SCHOTTKY RECTIFIER
STPS745D/F/G/FPJuly 2003- Ed:6G
POWER SCHOTTKY RECTIFIER
MAIN PRODUCT CHARACTERISTICS VERY SMALL CONDUCTION LOSSES NEGLIGIBLE SWITCHING LOSSES EXTREMELY FAST SWITCHING INSULATED PACKAGE: ISOWATT220AC,TO-220FPAC
Insulating voltage= 2000V DCCapacitance= 12pF AVALANCHE CAPABILITY SPECIFIED
FEATURES AND BENEFITSSingle Schottky rectifier suited for Switch Mode
Power Supply and high frequency DCto DC con-
verters.
Packaged eitherin TO-220AC, ISOWATT220AC,
TO-220FPACorD2 PAK, this deviceis intended
for usein low voltage, high frequency inverters,
free wheeling and polarity protection applications.
DESCRIPTION
ABSOLUTE RATINGS (limiting values) dPtot
dTj Rthj a< − thermal runaway conditionfora diodeonits own heatsink
STPS745D/F/G/FP
THERMAL RESISTANCES
STATIC ELECTRICAL CHARACTERISTICSPulse test:*tp= 380μs,δ <2% evaluate the conduction losses use the following equation:
P=0.42xIF(AV)+ 0.020IF2 (RMS) 25 50 75 100 125 150 1750
IF(av)(A)
Fig. 2: Average current versus ambient
temperature(δ= 0.5).
0123456789 100
PF(av)(W)
Fig.1: Average forward power dissipation versus
average forward current.
STPS745D/F/G/FP1E-3 1E-2 1E-1 1E+00
IM(A)
Fig. 5-1: Non repetitive surge peak forward
current versus overload duration (maximum
values) (TO-220AC andD2 PAK).
1E-3 1E-2 1E-1 1E+00
IM(A)
Fig. 5-2: Non repetitive surge peak forward
current versus overload duration (maximum
values) (ISOWATT220AC/TO-220FPAC).
1.2 25 50 75 100 125 150
P(t) (25°C)
ARMp
ARM
Fig.4: Normalized avalanche power derating
versus junction temperature.
0.10.01 1
0.1 100 1000
P(t) (1μs)
ARMp
ARM
Fig. 3: Normalized avalanche power derating
versus pulse duration.
1E-4 1E-3 1E-2 1E-1 1E+00.0
Zth(j-c)/Rth(j-c)
Fig. 6-1: Relative variationof thermal transient
impedance junctionto case versus pulse duration
(TO-220AC andD2 PAK).
1E-3 1E-2 1E-1 1E+0 1E+10.0
Zth(j-c)/Rth(j-c)
Fig. 6-2: Relative variationof thermal transient
impedance junctionto case versus pulse duration
(ISOWATT220AC/TO-220FPAC).
STPS745D/F/G/FP 5 10 15 20 25 30 35 40 451E-1
1E+0
1E+1
1E+2
1E+3
1E+4
5E+4
IR(μA)
Fig.7: Reverse leakage current versus reverse
voltage applied (typical values). 5 10 20 50100
C(pF)
Fig. 8: Junction capacitance versus reverse
voltage applied (typical values).
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.60.1
IFM(A)
Fig. 9: Forward voltage drop versus forward
current (maximum values). 2 4 6 8 1012141618200
Rth(j-a) (°C/W)
Fig. 10: Thermal resistance junctionto ambient
versus copper surface under tab (Epoxy printed
circuit board, copper thickness: 35μm).
STPS745D/F/G/FP
PACKAGE MECHANICAL DATA2 PAK (Plastic)
FOOTPRINT DIMENSIONS (in millimeters)
STPS745D/F/G/FP
PACKAGE MECHANICAL DATATO-220FPAC
PACKAGE MECHANICAL DATATO-220AC
