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STPS640CF-STPS640CT
POWER SCHOTTKY RECTIFIER
STPS640CT/CF/CBAugust 1999 - Ed: 4A
POWER SCHOTTKY RECTIFIER
MAIN PRODUCT CHARACTERISTICSVERY SMALL CONDUCTION LOSSES
NEGLIGIBLE SWITCHING LOSSES
EXTREMELY FAST SWITCHING
LOW FORWARD DROP VOLTAGE
LOW CAPACITANCE
LOW THERMAL RESISTANCE
INSULATED PACKAGE:
Insulating voltage = 2000V DC
Capacitance = 12pF
SMD PACKAGE (tape and reel option: -TR)
FEATURES AND BENEFITSDual Schottky rectifier suited to Switch Mode
Power Supplies and other Power Converters.
This device is intended for use in low and medium
voltage operation, and particulary, in high fre-
quency circuitries where low switching losses are
required (free wheeling and polarity protection).
DESCRIPTION
ABSOLUTE RATINGS (limiting values, per diode)1/6
THERMAL RESISTANCESPulse test : * tp = 380 μs, δ < 2%
To evaluate the maximum conduction losses use the following equation :
P = 0.42 x IF(AV) + 0.050 IF2 (RMS)
STATIC ELECTRICAL CHARACTERISTICS (per diode) 25 50 75 100 125 1500.0
IF(av)(A)
Fig. 2: Average current versus ambient temperature
(δ = 0.5, per diode).
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.00.00
PF(av)(W)
Fig. 1: Average forward power dissipation versus
average forward current (per diode).
When the diodes 1 and 2 are used simultaneously :
Δ Tj(diode 1) = P(diode1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c)
STPS640CT/CF/CB2/6
1E-3 1E-2 1E-1 1E+00.0
Zth(j-c)/Rth(j-c)
Fig. 4.1: Relative variation of thermal transient
impedance junction to case versus pulse duration
(TO-220AB / DPAK).
1E-3 1E-2 1E-1 1E+00
IM(A)
Fig. 3-2: Non repetitive surge peak forward currentversus overload duration.
(Maximum values, per diode) (ISOWATT220AB).
1E-3 1E-2 1E-1 1E+0 1E+10.0
Zth(j-c)/Rth(j-c)
Fig. 4-2: Relative variation of thermal transient
impedance junction to case versus pulse duration
(ISOWATT220AB). 5 10 15 20 25 30 35 401E-5
1E-4
1E-3
1E-2
IR(A)
Fig. 5: Reverse leakage current versus reversevoltage applied (typical values, per diode).
1E-3 1E-2 1E-1 1E+00
IM(A)
Fig. 3-1: Non repetitive surge peak forward currentversus overload duration.
(Maximum values, per diode) (TO-220AB / DPAK). 5 10 20 5010
C(pF)
Fig. 6: Junction capacitance versus reverse
voltage applied (typical values, per diode).
STPS640CT/CF/CB3/6
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.00.1
10.0
IFM(A)
Fig. 7: Forward voltage drop versus forward current(maximum values, per diode). 4 8 12 16 20 24 28 32 36 400
Rth(j-a) (°C/W)
Fig. 8: Thermal resistance junction to ambient versuscopper surface under tab (Epoxy printed circuit
board FR4, copper thickness: 35μm).
PACKAGE MECHANICAL DATATO-220AB
STPS640CT/CF/CB4/6
PACKAGE MECHANICAL DATADPAK
FOOTPRINT DIMENSIONS (in millimeters)
STPS640CT/CF/CB5/6
. consequences of
use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by
implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change without notice. This publication supersedes and replaces all information previously supplied.
STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written ap-
proval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics
© 1999 STMicroelectronics - Printed in Italy - All rights reserved.
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PACKAGE MECHANICAL DATAISOWATT220AB
Epoxy meets UL94,V0
STPS640CT/CF/CB6/6
