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STPS61H100CW
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER
STPS61H100CWOctober 2003- Ed:1A
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER
ABSOLUTE RATINGS (limiting values, per diode) dPtot
dTj Rthj a< − thermal runaway conditionfora diodeonits own heatsink
MAJOR PRODUCTS CHARACTERISTICSDual center tap Schottky rectifiers suited for high
frequency switch mode power supply.
Packagedin TO-247, this devicesis intended for
useto enhance the reliabilityof the application.
DESCRIPTION HIGH JUNCTION TEMPERATURE CAPABILITY LOW LEAKAGE CURRENT GOOD TRADE OFF BETWEEN LEAKAGE
CURRENT AND FORWARD VOLTAGE DROP LOW THERMAL RESISTANCE HIGH FREQUENCY OPERATION
FEATURES AND BENEFITS
STPS61H100CWPulsetest:*tp= 380µs,δ <2% evaluatethe conduction lossesusethe followingequation:= 0.56x IF(AV)+ 0.0036IF2 (RMS)
STATIC ELECTRICAL CHARACTERISTICS (per diode)
THERMAL RESISTANCESWhen the diodes1 and2 are used simultaneously: Tj(diode1)= P(diode1)x Rth(j-c)(Per diode)+ P(diode2)x Rth(c)
P(W)F(AV) 5 10 15 20 25 30 35 40
Fig.1: Conduction losses versus average current
(per diode).
Fig. 2: Normalized avalanche power derating
versus pulse duration.
P(t) (25°C)
ARMp
ARM
Fig.3: Normalized avalanche power derating
versus junction temperature.
I(A)F(AV)
Fig.4: Average forward current versus ambient
temperature (δ=0.5, per diode).
STPS61H100CW1.E-03 1.E-02 1.E-01 1.E+00
I(A)M
Fig.5: Non repetitive surge peak forward current
versus overload duration (maximum values, per
diode).
1.E-03 1.E-02 1.E-01 1.E+00
Z/Rth(j-c) th(j-c)
Fig.6: Relative variationof thermal impedance
junctionto case versus pulse duration.
(mA)R1.E-04
1.E-03
1.E-02
1.E-01
1.E+00
1.E+01
1.E+02 20 30 40 50 60 70 80 90 100
Fig.7: Reverse leakage current versus reverse
voltage applied (typical values, per diode).
10.00 10 100
C(nF)
Fig. 8: Junction capacitance versus reverse
voltage applied (typical values, per diode).
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
I(A)FM
Fig. 9: Forward voltage drop versus forward
current (per diode).
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