STPS61170CW ,High Voltage Power Schottky RectifierFeaturesA1■ High junction temperature capabilityKA2■ Low leakage current■ Good trade off between le ..
STPS61H100CW ,HIGH VOLTAGE POWER SCHOTTKY RECTIFIERFEATURES AND BENEFITSA2■ HIGH JUNCTION TEMPERATURE CAPABILITYKA1■ LOW LEAKAGE CURRENTTO-247■ GOOD T ..
STPS61L45CT ,Power Schottky RectifierFeaturesA1K■ High current capabilityA2■ Avalanche ratedK■ Low forward voltage drop current■ High fr ..
STPS61L45CW ,Power Schottky RectifierSTPS61L45CPower Schottky rectifier
STPS61L60CT ,Power Schottky RectifierFeaturesA1■ High current capabilityK■ Avalanche ratedA2■ Low forward voltage drop currentK■ High fr ..
STPS61L60CW ,Power Schottky RectifierElectrical characteristics Table 1. Device summaryII 2 x 30 A VF(AV)"Forward"V 60 V IRRM2 x IO XT ( ..
T1337 , TELECOMMUNICATIONS PRODUCTS
T1343 , TELECOMMUNICATIONS PRODUCTS
T14L1024N , 128K X 8 HIGH SPEED CMOS STATIC RAM
T14L1024N , 128K X 8 HIGH SPEED CMOS STATIC RAM
T14M256A , 32K X 8 HIGH SPEED CMOS STATIC RAM
T14M256A-8J , 32K X 8 HIGH SPEED CMOS STATIC RAM
STPS61170CW
High Voltage Power Schottky Rectifier
December 2010 Doc ID 11643 Rev 2 1/7
STPS61170CHigh voltage power Schottky rectifier
Features High junction temperature capability Low leakage current Good trade off between leakage current and
forward voltage drop Low thermal resistance High frequency operation Avalanche specification
DescriptionDual center tab Schottky rectifier suited for high
frequency switched mode power supply.
Packaged in TO-247, this device is intended for
use to enhance the reliability of the application.
Table 1. Device summary
Characteristics STPS61170C
2/7 Doc ID 11643 Rev 2
1 Characteristics
When the diodes 1 and 2 are used simultaneously :
ΔTj(diode 1) = P(diode1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c)
To evaluate the conduction losses use the following equation :
P = 0.54 x I F(AV) + 0.0043 IF2 (RMS)
Table 2. Absolute ratings (limiting values, per diode) Refer to Figure11 condition to avoid thermal runaway for a diode on its own heatsink
Table 3. Thermal resistance parameters
Table 4. Static electrical characteristics (per diode) Pulse test: tp = 5 ms, δ < 2% Pulse test: tp = 380 µs, δ < 2%
STPS61170C Characteristics
Doc ID 11643 Rev 2 3/7
Figure 1. Average forward power dissipation
versus average forward current
(per diode)
Figure 2. Average forward current versus
ambient temperature
(δ = 0.5, per diode)
Figure 3. Normalized avalanche power
derating versus pulse duration
Figure 4. Normalized avalanche power
derating versus junction
Figure 5. Non repetitive surge peak forward
current versus overload duration
(maximum values, per diode)
Figure 6. Relative variation of thermal
impedance junction to case versus
pulse duration (per diode)
Characteristics STPS61170C
4/7 Doc ID 11643 Rev 2
Figure 11. Reverse safe operating area(tp < 1µs and Tj < 150 °C)
Figure 7. Reverse leakage current versus
reverse voltage applied
(typical values, per diode)
Figure 8. Junction capacitance versus
reverse voltage applied
(typical values, per diode)
Figure 9. Forward voltage drop versus
forward current
(per diode, low level)
Figure 10. Forward voltage drop versus
forward current
(per diode, high level)
STPS61170C Package information
Doc ID 11643 Rev 2 5/7
2 Package information Epoxy meets UL94,V0 Cooling method: by conduction (C) Recommended torque value: 0.55 to 1.0 N·m
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOP ACK®
specifications, grade definitions and product status are available at: .
ECOPACK® is an ST trademark.
Table 5. TO-247 dimensions Dimension D plus gate protrusion does not exceed 20.5 mm Resin thickness around the mounting hole is not less than 0.9 mm
Ordering information STPS61170C
6/7 Doc ID 11643 Rev 2
3 Ordering information
4 Revision history
Table 6. Ordering information
Table 7. Document revision history
