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STPS61150CW
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER
STPS61150CWOctober 2003- Ed:1A
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER
ABSOLUTE RATINGS (limiting values, per diode)
MAJOR PRODUCTS CHARACTERISTICS dPtot
dTj Rthj a< − thermal runaway conditionfora diodeonits own heatsink
Dual center tap Schottky rectifiers suited for high
frequency switch mode power supply.
Packagedin TO-247, this devicesis intended for
useto enhance the reliabilityof the application.
DESCRIPTION HIGH JUNCTION TEMPERATURE CAPABILITY LOW LEAKAGE CURRENT GOOD TRADE OFF BETWEEN LEAKAGE
CURRENT AND FORWARD VOLTAGE DROP LOW THERMAL RESISTANCE HIGH FREQUENCY OPERATION
FEATURES AND BENEFITS
STPS61150CWPulsetest:*tp= 380μs,δ <2% evaluatethe conduction lossesusethe following equation:
P=0.54xIF(AV)+ 0.0043IF2 (RMS)
STATIC ELECTRICAL CHARACTERISTICS (per diode)
THERMAL RESISTANCESWhen the diodes1 and2 are used simultaneously: Tj(diode1)= P(diode1)x Rth(j-c)(Per diode)+ P(diode2)x Rth(c) 5 10 15 20 25 30 35 40
(W)F(AV)
Fig.1: Conduction losses versus average current
(per diode).
0.10.01 1
0.1 100 1000
P(t) (1μs)
ARMp
ARM
Fig. 2: Normalized avalanche power derating
versus pulse duration.
P(t) (25°C)
ARMp
ARM
Fig.3: Normalized avalanche power derating
versus junction temperature.
(A)F(AV)
Fig.4: Average forward current versus ambient
temperature (δ=0.5, per diode).
STPS61150CW1.E-03 1.E-02 1.E-01 1.E+00
(A)M
Fig.5: Non repetitive surge peak forward current
versus overload duration (maximum values, per
diode).
1.E-03 1.E-02 1.E-01 1.E+00
Z/Rth(j-c) th(j-c)
Fig.6: Relative variationof thermal impedance
junctionto case versus pulse duration.
(μA)R1.E-01
1.E+00
1.E+01
1.E+02
1.E+03
1.E+04
1.E+05 30 50 70 90 110 130 150
Fig.7: Reverse leakage current versus reverse
voltage applied (typical values, per diode).
10000 10 100 1000
C(pF)
Fig. 8: Junction capacitance versus reverse
voltage applied (typical values, per diode).
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
(A)FM
Fig. 9: Forward voltage drop versus forward
current (per diode).
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