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STPS41L30CG-TR
LOW DROP POWER SCHOTTKY RECTIFIER
STPS41L30CG/CT/CRJuly 2003-Ed:3A
LOW DROP POWER SCHOTTKY RECTIFIER
Dual center tab Schottky rectifier suitedfor Switch
Mode Power Supply and high frequency DCto DC
converters.
PackagedinD2 PAK,I2 PAK and TO-220ABthis
deviceis intended for usein low voltage, high
frequency inverters, free-wheeling and polarity
protection applications.
DESCRIPTION VERY SMALL CONDUCTION LOSSES NEGLIGIBLE SWITCHING LOSSES EXTREMELY FAST SWITCHING LOW FORWARD VOLTAGE DROP HIGH AVALANCHE CAPABILITY LOW THERMAL RESISTANCE AVALANCHE CAPABILITY SPECIFIED
FEATURES AND BENEFITS
ABSOLUTE RATINGS (limiting values, per diode)
MAIN PRODUCTS CHARACTERISTICS dPtot
dTj Rthj a< − thermal runaway conditionfora diodeonits own heatsink
STPS41L30CG / STPS41L30CT / STPS41L30CRPulse test:*tp= 380μs,δ <2% evaluate the conduction losses use the following equation:
P=0.27xIF(AV)+ 0.0055IF2 (RMS)
STATIC ELECTRICAL CHARACTERISTICS (per diode)
When the diodes1 and2 are used simultaneously:Δ Tj(diode1)= P(diode1)x Rth(j-c)(Per diode)+ P(diode2)x Rth(c)
THERMAL RESISTANCES 5 10 15 20 25
PF(av)(W)
Fig.1: Conduction losses versus average current.
25 50 75 100 125 150
IF(av)(A)
Fig.2: Average forward current versus ambient
temperature(δ= 0.5).
P(t) (25°C)
ARMp
ARM
Fig.4: Normalized avalanche power derating
versus junction temperature.
P(t) (1μs)
ARMp
ARM
Fig. 3: Normalized avalanche power derating
versus pulse duration.
STPS41L30CG / STPS41L30CT / STPS41L30CR
1.E-03 1.E-02 1.E-01 1.E+00
IM(A)
Fig.5: Non repetitive surge peak forward current
versus overload duration (maximum values).
1.E-02
1.E-01
1.E+00
1.E+01
1.E+02
1.E+03 5 10 15 20 25 30
IR(mA)
Fig.7: Reverse leakage current versus reverse
voltage applied (typical values).
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
IFM(A)
Fig.9: Forwardvoltage dropversus forwardcurrent.
5 10 15 20 25 30 35 40
Rth(j-a)(°C/W)
Fig. 10: Thermal resistance junctionto ambient ver-
sus copper surface under tab (epoxy printed board
FR4, Cu= 35μm) (STPS41L30CG only).
1.E-03 1.E-02 1.E-01 1.E+00
Zth(j-c)/Rth(j-c)
Fig.6: Relative variationof thermal impedance
junctionto case versus pulse duration.
10.0 10 100
C(nF)
Fig.8: Junction capacitance versus reverse voltage
applied (typical values).
