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STPS40M80CT
Power Schottky rectifier
STPS40M80CPower Schottky rectifier
Features High junction temperature capability Optimized trade-off between leakage current
and forward voltage drop Low leakage current Avalanche capability specified
DescriptionThis dual diode Schottky rectifier is suited for high
frequency switch mode power supply.
Packaged in TO-220AB, I2 PAK and D2 PAK, this
device is particularly suited for use in notebook,
game station, LCD TV and desktop adapters,
providing these applications with a good
efficiency at both low and high load.
Figure 1. Electrical characteristics(a)
Table 1. Device summary VARM and IARM must respect the reverse safe
operating area defined in Figure 11. VAR and IAR are
pulse measurements (tp < 1 µs). VR, IR, VRRM and VF,
are static characteristics
Characteristics STPS40M80C
1 Characteristics When the two diodes 1 and 2 are used simultaneously:
ΔTj(diode 1) = P(diode 1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c)
Table 2. Absolute ratings (limiting values, per diode, at Tamb = 25 °C unless
otherwise specified) For temperature or pulse time duration deratings, please refer to figure 3 and 4. More details regarding the
avalanche energy measurements and diode validation in the avalanche are provided in the application
notes AN1768 and AN2025. See Figure11 condition to avoid thermal runaway for a diode on its own heatsink
Table 3. Thermal parameters
STPS40M80C Characteristics To evaluate the conduction losses use the following equation:
P = 0.475 x IF(AV) + 0.008 x IF2 (RMS)
Table 4. Static electrical characteristics (per diode) Pulse test: tp = 5 ms, δ < 2 % Pulse test: tp = 380 µs, δ < 2 %
Figure 2. Average forward power dissipation
versus average forward current
(per diode)
Figure 3. Average forward current versus
ambient temperature
(δ = 0.5, per diode)
Figure 4. Normalized avalanche power
derating versus pulse duration
Figure 5. Normalized avalanche power
derating versus junction
temperature
Characteristics STPS40M80C
Figure 6. Non repetitive surge peak forward
current versus overload duration
(maximum values, per diode)
Figure 7. Relative thermal impedance
junction to case versus pulse
duration
Figure 8. Reverse leakage current versus
reverse voltage applied
(typical values, per diode)
Figure 9. Junction capacitance versus
reverse voltage applied
(typical values, per diode)
Figure 10. Forward voltage drop versus
forward current (per diode)
Figure 11. Reverse safe operating area p < 1 µs and Tj < 150 °C)
STPS40M80C Characteristics
Figure 12. Thermal resistance junction to ambient versus copper surface under tab for D2 PAK
Package information STPS40M80C
2 Package information Epoxy meets UL94, V0 Cooling method: by conduction (C) Recommended torque value: 0.4 to 0.6 N·m
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: .
ECOPACK® is an ST trademark.
Table 5. TO-220AB dimensions
