STPS40170CW ,High Voltage Power Schottky RectifierFEATURES AND BENEFITSA2A2A1■ High junction temperature capabilityKA1■ Low leakage current2D PAK■ Go ..
STPS40H100CW ,HIGH VOLTAGE POWER SCHOTTKY RECTIFIERSTPS40H100CW®HIGH VOLTAGE POWER SCHOTTKY RECTIFIERMAIN PRODUCT CHARACTERISTICSA1KI 2 x 20 AF(AV)A2V ..
STPS40L15CT ,15V 40A Schottky Discrete Diode in a TO-220AB packageFEATURES AND BENEFITSn VERY LOW FORWARD VOLTAGE DROP FORLESS POWER DISSIPATION AND REDUCEDHEATSINK ..
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STPS40-L15CW ,15V 40A Schottky Discrete Diode in a TO-247AC package®STPS40L15CW/CTLOW DROP OR-ing POWER SCHOTTKY DIODEMAJOR PRODUCT CHARACTERISTICSA1I 2x20AF(AV)KV 15 ..
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T1231 , TELECOMMUNICATIONS PRODUCTS
T1231 , TELECOMMUNICATIONS PRODUCTS
T1231 , TELECOMMUNICATIONS PRODUCTS
T1231NL , TELECOMMUNICATIONS PRODUCTS
T1235-600G-TR ,12A triac, 600VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value Unit²I RMS on-state current (full sine wave)Tc = 105 ..
T1235-800G ,12A TRIACSapplications such as static relays, heatingregulation, induction motor starting circuits... or forA ..
STPS40170CW
High Voltage Power Schottky Rectifier
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Table 1: Main Product Characteristics
STPS40170CHIGH VOLTAGE POWER SCHOTTKY RECTIFIER
REV. 1
September 2005
FEATURES AND BENEFITS High junction temperature capability Low leakage current Good trade off between leakage current and
forward voltage drop Low thermal resistance High frequency operation Avalanche specification
DESCRIPTIONDual center tab Schottky rectifier suited for High
Frequency Switched Mode Power Supplies.
Packaged in TO-220AB, D2PAK and TO-247,
these devices are intended for use to enhance the
reliability of the application.
Table 2: Order Codes
STPS40170C
Table 3: Absolute Ratings (limiting values, per diode)
Table 4: Thermal Parameters
Table 5: Static Electrical Characteristics (per diode)Pulse test: * tp = 5 ms, δ < 2%
** tp = 380 µs, δ < 2%
To evaluate the conduction losses use the following equation: P = 0.64 x IF(AV) + 0.055 IF2 (RMS)
* :
When the diodes 1 and 2 are used simultaneously:
∆ Tj(diode 1) = P(diode 1) x R th(j-c) (Per diode) + P(diode 2) x R th(c)
STPS40170C3/8
Figure 1: Average forward power dissipation
versus average forward current (per diode)
Figure 2: Average forward current versus
ambient temperature (δ = 0.5, per diode)
Figure 3: Normalized avalanche power
derating versus pulse duration
Figure 4: Normalized avalanche power
Figure 5: Non repetitive surge peak forward
current versus overload duration (maximum
values, per diode)
Figure 6: Relative variation of thermal
impedance junction to case versus pulse
duration
STPS40170C
Figure 7: Reverse leakage current versus
reverse voltage applied (typical values, per
diode)
Figure 8: Junction capacitance versus reverse
voltage applied (typical values, per diode)
Figure 9: Forward voltage drop versus forward
current (per diode, low level)
Figure 10: Forward voltage drop versus
forward current (per diode, high level)
Figure 11: Thermal resistance junction to am-
bient versus copper surface under tab (epoxy
printed board FR4, Cu = 35µm) (D2 PAK)
STPS40170C5/8
Figure 12: D2 PAK Package Mechanical Data
Figure 13: Foot Print Dimensions (in millimeters)
STPS40170C
Figure 14: TO-247 Package Mechanical Data
