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STPS40150CG-STPS40150CG-TR-STPS40150CT
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER
STPS40150CG/CT/CWOctober 2003- Ed:1A
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER
ABSOLUTE RATINGS (limiting values, per diode)
MAJOR PRODUCTS CHARACTERISTICS dPtot
dTj Rthj a< − thermal runaway conditionfora diodeonits own heatsink
Dual center tap Schottky rectifiers suited for high
frequency switch mode power supply.
Packagedin TO-247, TO-220AB andD2 PAK, this
devicesis intended for use to enhance the
reliabilityof the application.
DESCRIPTION HIGH JUNCTION TEMPERATURE CAPABILITY LOW LEAKAGE CURRENT GOOD TRADE OFF BETWEEN LEAKAGE
CURRENT AND FORWARD VOLTAGE DROP LOW THERMAL RESISTANCE HIGH FREQUENCY OPERATION
FEATURES AND BENEFITS
STPS40150CT/CW/CGPulsetest:*tp= 380µs,δ <2% evaluatethe conduction lossesusethe followingequation:= 0.64x IF(AV)+ 0.0055IF2 (RMS)
STATIC ELECTRICAL CHARACTERISTICS (per diode)
THERMAL RESISTANCESWhen the diodes1 and2 are used simultaneously: Tj(diode1)= P(diode1)x Rth(j-c)(Per diode)+ P(diode2)x Rth(c)
P(W)F(AV)2 4 6 8 1012 14 16 1820 22 24 2628
Fig.1: Conduction losses versus average current
(per diode).
Fig. 2: Normalized avalanche power derating
versus pulse duration.
STPS40150CT/CW/CG1.2 50 75 100 125 150
P(t) (25°C)
ARMp
ARM
Fig.3: Normalized avalanche power derating
versus junction temperature. 25 50 75 100 125 150 175
I(A)F(AV)
Fig.4: Average forward current versus ambient
temperature (δ=0.5, per diode).
1.E-03 1.E-02 1.E-01 1.E+00
I(A)M
Fig.5: Non repetitive surge peak forward current
versus overload duration (maximum values, per
diode).
1.E-03 1.E-02 1.E-01 1.E+00
Z/Rth(j-c) th(j-c)
Fig.6: Relative variationof thermal impedance
junctionto case versus pulse duration.
1.E-01
1.E+00
1.E+01
1.E+02
1.E+03
1.E+04
1.E+05 30 50 70 90 110 130 150
(µA)R
Fig.7: Reverse leakage current versus reverse
voltage applied (typical values, per diode).
1000 10 100 1000
C(pF)
Fig. 8: Junction capacitance versus reverse
voltage applied (typical values, per diode).
