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STPS3L60S
POWER SCHOTTKY RECTIFIER
STPS3L60SJuly 1999 - Ed: 1A
POWER SCHOTTKY RECTIFIER
Schottky rectifier suited for Switched Mode Power
Supplies and high frequency DC to DC converters.
Packaged in SMC, this device is intended for use in
DC/DC chargers.
DESCRIPTIONNEGLIGIBLE SWITCHING LOSSES
LOW THERMAL RESISTANCE
FEATURES AND BENEFITS
ABSOLUTE RATINGS (limiting values)
MAIN PRODUCT CHARACTERISTICS* : dPtot
dTj < 1
Rth(j−a) thermal runaway condition for a diode on its own heatsink
1/4
Pulse test : * tp = 380 μs, δ < 2%
To evaluate the conduction losses use the following equation :
P = 0.54 x IF(AV) + 0.037 IF2 (RMS)
STATIC ELECTRICAL CHARACTERISTICS
THERMAL RESISTANCES0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.00.0
PF(av)(W)
Fig. 1: Average forward power dissipation versus
average forward current.0.0
IF(av)(A)
Fig. 2: Average forward current versus ambient
temperature(δ = 0.5).
1E-3 1E-2 1E-1 1E+00.0
1.0
Zth(j-l)/Rth(j-l)
Fig. 4: Relative variation of thermal impedance
junction to lead versus pulse duration.
1E-3 1E-2 1E-1 1E+00
IM(A)
Fig. 3: Non repetitive surge peak forward
current versus overload duration (maximum
values).
STPS3L60S2/4
5 10 15 20 25 30 35 40 45 50 55 601E-31E-2
1E-1
1E+0
1E+1
5E+1
IR(mA)
Fig. 5: Reverse leakage current versus reverse
voltage applied (typical values).
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.00.0
5.0
IFM(A)
Fig. 7-1: Forward voltage drop versus forwardcurrent (low level, maximum values). 10 10010
C(pF)
Fig. 6: Junction capacitance versus reverse
voltage applied (typical values).
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.61
IFM(A)
Fig. 7-2: Forward voltage drop versus forward
current (high level, maximum values).
100
Rth(j-a) (°C/W)
Fig. 8: Thermal resistance junction to ambient
versus copper surface under each lead (Epoxy
printed circuit board FR4, copper thickness:
35mm)
STPS3L60S3/4
:
www.ic-phoenix.com
.