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STPS30L60CG-TR
POWER SCHOTTKY RECTIFIER
STPS30L60CW/CT/CG/CRJuly 2003- Ed:3B
POWER SCHOTTKY RECTIFIER
Dual center tap Schottky rectifiers suited for
Switched Mode Power Supplies and high
frequency DC to DC converters. Packagedin
TO-220,D2 PAK,I2 PAK and TO-247 this deviceis
intendedfor usein high frequency inverters.
DESCRIPTION NEGLIGIBLE SWITCHING LOSSES LOW FORWARD VOLTAGE DROP LOW THERMAL RESISTANCE AVALANCHE CAPABILITY SPECIFIED
FEATURES AND BENEFITS
ABSOLUTE RATINGS (limiting values, per diode)
MAIN PRODUCT CHARACTERISTICS dPtot
dTj Rthj a< − thermal runaway conditionfora diodeonits own heatsink
STPS30L60CW/CT/CG/CRPulse test:*tp= 380μs,δ <2% evaluate the maximum conduction losses use the following equation:
P=0.42xIF(AV)+ 0.009IF2 (RMS)
STATIC ELECTRICAL CHARACTERISTICS (per diode)
THERMAL RESISTANCES 2 4 6 8 101214 1618200
PF(av)(W)
Fig.1: Average forward power dissipation versus
average forward current (per diode). 25 50 75 100 125 1500
IF(av)(A)
Fig.2: Average forward current versus ambient
temperature(δ= 0.5, per diode).
When the diodes1 and2 are used simultaneously:Δ Tj(diode1)= P(diode1)x Rth(j-c)(Per diode)+ P(diode2)x Rth(c)
STPS30L60CW/CT/CG/CR 5 10 15 20 25 30 35 40 45 50 55 601E-2
1E-1
1E+0
1E+1
1E+2
5E+2
IR(mA)
Fig.7: Reverse leakage current versus reverse
voltage applied (typical values, per diode). 10 1000.1
C(nF)
Fig. 8: Junction capacitance versus reverse
voltage applied (typical values, per diode).
1E-4 1E-3 1E-2 1E-1 1E+00.0
1.0
Zth(j-c)/Rth(j-c)
Fig.6: Relative variationof thermal impedance
junctionto case versus pulse duration.
1E-3 1E-2 1E-1 1E+00
250
IM(A)
Fig. 5: Non repetitive surge peak forward
current versus overload duration (maximum
values, per diode).
1.2 25 50 75 100 125 150
P(t) (25°C)
ARMp
ARM
Fig.4: Normalized avalanche power derating
versus junction temperature.
0.10.01 1
0.1 100 1000
P(t) (1μs)
ARMp
ARM
Fig. 3: Normalized avalanche power derating
versus pulse duration.
STPS30L60CW/CT/CG/CR
PACKAGE MECHANICAL DATA2 PAK
FOOTPRINT0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 2.25 2.501
200
IFM(A)
Fig. 9: Forward voltage drop versus forward
current (maximum values, per diode). 4 8 12 16 20 24 28 32 36 400
Rth(j-a) (°C/W)
Fig. 10: Thermal resistance junctionto ambient
versus copper surface under tabforD2 PAK (Epoxy
printed circuit board FR4, copper thickness: 35μm)
STPS30L60CW/CT/CG/CR
PACKAGE MECHANICAL DATATO-220AB
PACKAGE MECHANICAL DATA2 PAK