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Partno	Mfg	Dc	Qty	Available	Descript
STPS3045CG-TR \|STPS3045CGTR	STM	N/a	2878	avai	POWER SCHOTTKY RECTIFIER

STPS3045CG-TR ,POWER SCHOTTKY RECTIFIERapplications.A1A1TO-247SOT-93STPS3045CWSTPS3045CPA2KA1TO-220FPABSTPS3045CFPJuly 2003 - Ed: 6E1/9STP ..
STPS3045CP ,POWER SCHOTTKY RECTIFIERFEATURES AND BENEFITSn VERY SMALL CONDUCTION LOSSESn NEGLIGIBLE SWITCHING LOSSESn EXTREMELY FAST SW ..
STPS3045CPI ,POWER SCHOTTKY RECTIFIERapplications.SOT-93TO-247STPS3045CPSTPS3045CWAugust 2002 - Ed: 5E1/9STPS3045CT/CG/CR/CP/CPI/CWABSOL ..
STPS3045CT ,POWER SCHOTTKY RECTIFIERFEATURES AND BENEFITSn VERY SMALL CONDUCTION LOSSESn NEGLIGIBLE SWITCHING LOSSESn EXTREMELY FAST SW ..
STPS3045CT. ,POWER SCHOTTKY RECTIFIERPOWER SCHOTTKY RECTIFIERMAIN PRODUCT CHARACTERISTICSI 2x15AF(AV)V 45 VRRMTj (max) 175 °C0.57 VVF
STPS3045CT.. ,POWER SCHOTTKY RECTIFIERFEATURES AND BENEFITSn VERY SMALL CONDUCTION LOSSESn NEGLIGIBLE SWITCHING LOSSESn EXTREMELY FAST SW ..
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STPS3045CG-TR
POWER SCHOTTKY RECTIFIER
STPS3045CT/CG/CR/CP/CPI/CW/CFP
July 2003- Ed:6E
POWER SCHOTTKY RECTIFIER
MAIN PRODUCT CHARACTERISTICS VERY SMALL CONDUCTION LOSSES NEGLIGIBLE SWITCHING LOSSES EXTREMELY FAST SWITCHING LOW THERMAL RESISTANCE INSULATED PACKAGE: TOP-3I
Insulating voltage= 2500V RMS
Capacitance= 12pF AVALANCHE CAPABILITY SPECIFIED
FEATURES AND BENEFITS
Dual center tap Schottky rectifier suited for
SwitchMode Power Supply and high frequency DC DC converters.
Packaged either in TO-220AB, TO-220FPAB,2 PAK,I2 PAK, TO-247, SOT93or TOP-3I, this
deviceis especially intended for usein low volt-
age, high frequency inverters, free wheeling and
polarity protection applications.
DESCRIPTION
STPS3045CT/CG/CR/CP/CPI/CW/CFP
When the diodes1 and2 are used simultaneously:Tj (diode1)=P (diode1)x Rth(j-c) (per diode)+P (diode2)x Rth(c)
THERMAL RESISTANCES
ABSOLUTE RATINGS (limiting values, per diode) dPtot
dTj Rthj a< − thermal runaway conditionfora diodeonits own heatsink
STATIC ELECTRICAL CHARACTERISTICS (Per diode)
Pulse test:*tp= 380μs,δ <2% evaluate the conduction losses use the following equation:
P=0.42xIF(AV)+ 0.01IF2 (RMS)
STPS3045CT/CG/CR/CP/CPI/CW/CFP (W)F(AV)
02468 10 12 14 16 18 20
Fig.1: Average forward power dissipation versus
average forward current (per diode). (A)F(AV) 25 50 75 100 125 150 175
Fig. 2: Average current versus ambient
temperature(δ= 0.5, per diode). (A)M
1.E-03 1.E-02 1.E-01 1.E+00
Fig. 5-1: Non repetitive surge peak forward current
versus overload duration (maximum values, per
diode).
1.E-03 1.E-02 1.E-01 1.E+00 (A)M
Fig. 5-2: Non repetitive surge peak forward current
versus overload duration (maximum values, per
diode).
1.2 25 50 75 100 125 150
P(t) (25°C)
ARMp
ARM
Fig.4: Normalized avalanche power derating
versus junction temperature.
0.10.01 1
0.1 100 1000
P(t) (1μs)
ARMp
ARM
Fig. 3: Normalized avalanche power derating
versus pulse duration.
STPS3045CT/CG/CR/CP/CPI/CW/CFP
1.E-03 1.E-02 1.E-01 1.E+00 (A)M
Fig. 5-3: Non repetitive surge peak forward current
versus overload duration (maximum values, per
diode).
Z/Rth(j-c) th(j-c)
1.E-03 1.E-02 1.E-01 1.E+00 1.E+01
Fig. 6-2: Relative variationof thermal transient
impedance junctionto case versus pulse duration.
1.E-01
1.E+00
1.E+01
1.E+02
1.E+03
1.E+04
1.E+05 5 10 15 20 25 30 35 40 45 (μA)R
Fig.7: Reverse leakage current versus reverse
voltage applied (typical values, per diode).
C(nF)
10000 10 100
Fig. 8: Junction capacitance versus reverse
voltage applied (typical values, per diode). (A)FM
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
Fig. 9: Forward voltage drop versus forward
current (maximum values, per diode).
Z/Rth(j-c) th(j-c)
1.E-03 1.E-02 1.E-01 1.E+00
Fig. 6-1: Relative variationof thermal transient
impedance junctionto case versus pulse duration.
STPS3045CT/CG/CR/CP/CPI/CW/CFP 5 10 15 20 25 30 35 40 (°C/W)th(j-a)
Fig. 10: Thermal resistance junctionto ambient
versus copper surface under tab (epoxy printed
board FR4, Cu=35μm).
PACKAGE MECHANICAL DATA
TO-220AB
STPS3045CT/CG/CR/CP/CPI/CW/CFP
PACKAGE MECHANICAL DATA2 PAK
PACKAGE MECHANICAL DATA
TOP-3I (isolated)

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