STPS3030CG-TR ,LOW DROP POWER SCHOTTKY RECTIFIERapplications.ABSOLUTE RATINGS (limiting values, per diode)Symbol Parameter Value UnitV 30 VRRMRepet ..
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STPS3030CT ,LOW DROP POWER SCHOTTKY RECTIFIER®STPS3030CT/CG/CRLOW DROP POWER SCHOTTKY RECTIFIERMAJOR PRODUCTS CHARACTERISTICSA1I 2x15AF(AV)KV 30 ..
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STPS3045CG ,POWER SCHOTTKY RECTIFIERPOWER SCHOTTKY RECTIFIERMAIN PRODUCT CHARACTERISTICSI 2x15AF(AV)V 45 VRRMTj (max) 175 °C0.57 VVF
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STPS3030CG-TR
LOW DROP POWER SCHOTTKY RECTIFIER
STPS3030CT/CG/CRJuly 2003- Ed:3A
LOW DROP POWER SCHOTTKY RECTIFIER
Dual Schottky rectifier suited for switch Mode
Power Supply and high frequency DC to DC
converters.
Packagedin TO-220AB,D2 PAK andI2 PAK, this
deviceis intended for usein low voltage high
frequency inverters, free wheeling and polarity
protection applications.
DESCRIPTION VERY SMALL CONDUCTION LOSSES NEGLIGIBLE SWITCHING LOSSES EXTREMELY FAST SWITCHING LOW FORWARD VOLTAGE DROP FOR
HIGHER EFFICIENCY LOW THERMAL RESISTANCE AVALANCHE CAPABILITY SPECIFIED
FEATURES AND BENEFITS
ABSOLUTE RATINGS (limiting values, per diode)
MAJOR PRODUCTS CHARACTERISTICS dPtot
dTj Rthj a< − thermal runaway conditionfora diodeonits own heatsink
STPS3030CT/CG/CRPulse test:*tp= 380μs,δ <2% evaluate the conduction losses use the following equation:
P=0.26xIF(AV)+ 0.0107IF2 (RMS)
STATIC ELECTRICAL CHARACTERISTICS (per diode)
THERMAL RESISTANCES
02468 10 12 14 16 18 20
P(W)
Fig.1: Conduction losses versus averagecurrent.
25 50 75 100 125 150
IF(av)(A)
Fig.2: Average forward current versus ambient
temperature(δ= 0.5).
1.2 25 50 75 100 125 150
P(t) (25°C)
ARMp
ARM
Fig.4: Normalized avalanche power derating
versus junction temperature.
0.10.01 1
0.1 100 1000
P(t) (1μs)
ARMp
ARM
Fig. 3: Normalized avalanche power derating
versus pulse duration.
STPS3030CT/CG/CR
1.E-03 1.E-02 1.E-01 1.E+00
Zth(j-c)/Rth(j-c)
Fig.6: Relative variationof thermal impedance
junctionto case versus pulse duration.
1.E-02
1.E-01
1.E+00
1.E+01
1.E+02
1.E+03 5 10 15 20 25 30
IR(mA)
Fig.7: Reverse leakage current versus reverse
voltage applied (typical values).
10.0 10 100
C(nF)
Fig. 8: Junction capacitance versus reverse
voltage applied (typical values).
1.E-03 1.E-02 1.E-01 1.E+00
IM(A)
Fig. 5: Non repetitive surge peak forward
current versus overload duration (maximum
values).
0.0 0.2 0.4 0.6 0.8 1.0 1.2
IFM(A)
Fig. 9: Forward voltage drop versus forward
current.
5 10 15 20 25 30 35 40
Rth(j-a)(°C/W)
Fig. 10: Thermal resistance junctionto ambient
versus copper surface under tab (epoxy printed
board FR4, Cu= 35μm).
