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STPS30120CTST N/a1876avaiPower Schottky rectifier
STPS30120CT. |STPS30120CTSTN/a41avaiPower Schottky rectifier


STPS30120CT ,Power Schottky rectifierElectrical characteristics STPS30120CTNIV "Forward"ITable 1. Device summary2 x I XOSymbol V ..
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STPS30150CW ,HIGH VOLTAGE POWER SCHOTTKY RECTIFIERSTPS30150CT/CW/CFP®HIGH VOLTAGE POWER SCHOTTKY RECTIFIERMAIN PRODUCT CHARACTERISTICSA1I 2x15AF(AV)K ..
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STPS3030CG ,LOW DROP POWER SCHOTTKY RECTIFIERapplications.ABSOLUTE RATINGS (limiting values, per diode)Symbol Parameter Value UnitV 30 VRRMRepet ..
T1144NL , TELECOMMUNICATIONS PRODUCTS
T1144NL , TELECOMMUNICATIONS PRODUCTS
T1144T , T1/CEPT/ISDN-PRI TRANSFORMERS Dual Surface Mount, 1500Vrms, Extended and Standard Temperature Range
T1144T , T1/CEPT/ISDN-PRI TRANSFORMERS Dual Surface Mount, 1500Vrms, Extended and Standard Temperature Range
T1145 , TELECOMMUNICATIONS PRODUCTS
T1146 , TELECOMMUNICATIONS PRODUCTS


STPS30120CT-STPS30120CT.
Power Schottky rectifier
January 2012 Doc ID 11213 Rev 4 1/9
STPS30120C

Power Schottky rectifier
Features
High junction temperature capability Avalanche rated Low leakage current Good trade-off between leakage current and
forward voltage drop
Description

Dual center tap Schottky rectifier suited for high
frequency switch mode power supply.
Packaged in TO-220AB, TO-220AB narrow leads,
and I2 PAK, this device is intended to be used in
notebook and LCD adaptors, desktop SMPS,
providing in these applications a margin between
the remaining voltages applied on the diode and
the voltage capability of the diode.
Figure 1. Electrical characteristics (a)

VARM and IARM must respect the reverse safe
operating area defined in Figure 10. VAR and IAR are
pulse measurements (tp < 1 µs). VR, IR, VRRM and VF,
are static characteristics.
Table 1. Device summary
Characteristics STPS30120C
2/9 Doc ID 11213 Rev 4
1 Characteristics



When the diodes 1 and 2 are used simultaneously :
Tj(diode 1) = P(diode 1) x Rth(j-c)(per diode) + P(diode 2) x Rth(c)
Table 2. Absolute ratings (limiting values, per diode)
Refer to Figure10 condition to avoid thermal runaway for a diode on its own heatsink
Table 3. Thermal parameters
STPS30120C Characteristics
Doc ID 11213 Rev 4 3/9



Table 4. Static electrical characteristics (per diode)
Pulse test : tp = 5 ms, δ < 2% Pulse test : tp = 380 μs, δ < 2%
To evaluate the maximum conduction losses use the following equation :
P = 0.59 x IF(AV) + 0.01 IF2 (RMS)
Figure 2. Average forward power
dissipation versus average forward
current (per diode)
Figure 3. Average forward current versus
ambient temperature
(δ = 0.5, per diode)
Figure 4. Normalized avalanche power
derating versus pulse duration
Figure 5. Normalized avalanche power
derating versus junction
temperature
Characteristics STPS30120C
4/9 Doc ID 11213 Rev 4


Figure 10. Reverse safe operating area (tp < 1 µs and Tj < 150 °C)
Figure 6. Relative variation of thermal
impedance junction to ambient
versus pulse duration
Figure 7. Reverse leakage current versus
reverse voltage applied
(typical values, per diode)
Figure 8. Junction capacitance versus
reverse voltage applied
(typical values, per diode)
Figure 9. Forward voltage drop versus
forward current (per diode)
STPS30120C Package information
Doc ID 11213 Rev 4 5/9
2 Package information
Epoxy meets UL94, V0 Cooling method: by conduction (C) Recommended torque value: 0.4 to 0.6 N·m
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOP ACK®
specifications, grade definitions and product status are available at: .
ECOPACK® is an ST trademark.
Table 5. TO-220AB dimensions
Package information STPS30120C
6/9 Doc ID 11213 Rev 4
Table 6. TO-220AB narrow leads dimensions
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