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T1133 , TRIANGULAR TYPE
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STPS20L45CG-TR
LOW DROP POWER SCHOTTKY RECTIFIER
STPS20L45CF/CW/CT/CFP/CGJuly 2003-Ed:3C
LOW DROP POWER SCHOTTKY RECTIFIER
Dual center tap Schottky rectifiers designedfor
high frequency switched mode power supplies andtoDC converters.
These devicesare intendedfor useinlow voltage,
high frequency inverters, free-wheeling and
polarity protection applications.
DESCRIPTION LOW FORWARD VOLTAGE DROP MEANING
VERY SMALL CONDUCTION LOSSES LOW SWITCHING LOSSES ALLOWING HIGH
FREQUENCY OPERATION INSULATED PACKAGE: ISOWATT220AB,
TO-220FPAB
Insulating voltage= 2000VDC
Capacitance= 12pF AVALANCHE CAPABILITY SPECIFIED
FEATURES AND BENEFITS
ABSOLUTE RATINGS (limiting values,per diode)
MAJOR PRODUCTS CHARACTERISTICS dPtot
dTj Rthja< − thermal runaway conditionfora diodeonits own heatsink
STPS20L45CF/CW/CT/CFP/CGPulsetest:*tp=380μs,δ <2% evaluatethe conduction lossesusethe following equation:
P=0.28xIF(AV)+ 0.022IF2 (RMS)
STATIC ELECTRICAL CHARACTERISTICS (per diode)
THERMAL RESISTANCES02468 10 12 140
PF(av)(W)
Fig.1: Average forward power dissipation versus
average forward current (per diode). 25 50 75 100 125 1500
IF(av)(A)
Fig.2: Average forward current versus ambient
temperature(δ= 0.5,per diode).
Whenthe diodes1 and2are used simultaneously: Tj(diode1)= P(diode1)x Rth(j-c)(Per diode)+ P(diode2)x Rth(c)
STPS20L45CF/CW/CT/CFP/CG1E-3 1E-2 1E-1 1E+00.0
Zth(j-c)/Rth(j-c)
Fig. 6-1: Relative variationof thermal impedance
junctionto case versus pulse duration (TO-220AB,
TO-247,D2 PAK).
1E-3 1E-2 1E-1 1E+0 1E+10.0
Zth(j-c)/Rth(j-c)
Fig. 6-2: Relative variationof thermal impedance
junction to case versus pulse duration
(ISOWATT220AB, TO-220FPAB).
1E-3 1E-2 1E-1 1E+00
IM(A)
Fig. 5-2: Non repetitive surge peak forward
current versus overload duration (maximum
values, per diode, ISOWATT220AB,
TO-220FPAB).
1E-3 1E-2 1E-1 1E+00
IM(A)
Fig. 5-1: Non repetitive surge peak forward
current versus overload duration (maximum
values, per diode, TO-220AB, TO-247,2 PAK).
1.2 25 50 75 100 125 150
P(t) (25°C)
ARMp
ARM
Fig.4: Normalized avalanche power derating
versus junction temperature.
0.10.01 1
0.1 100 1000
P(t) (1μs)
ARMp
ARM
Fig.3: Normalized avalanche power derating
versus pulse duration.
