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STPS20H100
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER
STPS20H100CT/CF/CG/CG-1
May 2000-Ed:3C
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER
IF(AV) 2x10A
VRRM 100V 175°C (max) 0.64V
MAIN PRODUCT CHARACTERISTICS NEGLIGIBLE SWITCHING LOSSES HIGH JUNCTION TEMPERATURE CAPABILITY GOODTRADE OFF BETWEENLEAKAGE CUR-
RENT AND FORWARD VOLTAGE DROP LOW LEAKAGE CURRENT AVALANCHE RATED INSULATED PACKAGE: ISOWATT220AB
Insulating Voltage= 2000VDC
Capacitance=45pF
FEATURES AND BENEFITSDual center tap schottky rectifier designedfor
high frequency miniature Switched Mode
Power Supplies suchas adaptators andon
board DC/DC converters.
DESCRIPTION
TO-220AB
STPS20H100CT
Symbol Parameter Value UnitVRRM Repetitive peak reverse voltage 100 V
IF(RMS) RMS forward current 30 A
IF(AV) Average forward
currentδ=0.5
TO-220AB2 PAK/I2 PAK= 160°C per diode
per device
ISOWATT220ABTc= 145°C
IFSM Surge non repetitive forward current tp=10ms sinusoidal 250 A
IRRM Repetitive peak reverse current tp=2μs squareF= 1kHz 1 A
IRSM Non repetitive peak reverse current tp= 100μs square 3 A
Tstg Storage temperature range -65to+ 175 °C Maximum operating junction temperature* 175 °C
dV/dt Critical rateofriseof reverse voltage 10000 V/μs
ABSOLUTE RATINGS (limiting values,per diode)
2 PAK
STPS20H100CG-12 PAK
STPS20H100CGA1
ISOWATT220AB
STPS20H100CF dPtot
dTj Rthja< − thermal runaway conditionfora diodeonits own heatsink
STPS20H100CT/CF/CG/CG-1
Symbol Parameter Value UnitRth(j-c) Junctionto case TO-220AB/D2 PAK/I2 PAK Per diode 1.6 °C/W
ISOWATT220AB Per diode 4
TO-220AB/D2 PAK/I2 PAK Total 0.9
ISOWATT220AB Total 3.2 °C/W
Rth(c) TO-220AB/D2 PAK/I2 PAK Coupling 0.15
ISOWATT220AB Coupling 2.5
THERMAL RESISTANCES
Symbol Parameter Tests conditions Min. Typ. Max. Unit* Reverse leakage current Tj= 25°CVR =VRRM 4.5 μA= 125°C2 6 mA** Forward voltage drop Tj= 25°CIF=8A 0.71 V= 25°CIF=10A 0.77= 25°CIF=16A 0.81= 25°CIF=20A 0.88= 125°CIF=8A 0.56 0.58= 125°CIF=10A 0.59 0.64= 125°CIF=16A 0.65 0.68= 125°CIF=20A 0.67 0.73
Pulsetest:*tp=5ms,δ <2%tp=380μs,δ <2% evaluatethe maximum conduction lossesusethe following equation:= 0.55x IF(AV)+ 0.009xIF2(RMS)
STATIC ELECTRICAL CHARACTERISTICS (per diode)
02468 10 120
IF(av)(A)
PF(av)(W)δ=0.5=1=0.05 δ=0.2δ=0.1
δ=tp/T tp
Fig.1: Average forward power dissipation versus
average forward current (per diode). 25 50 75 100 125 150 1750
IF(av)(A)
Tamb(°C)ISOWATT220AB
TO220ABRth(j-a)=Rth(j-c)
Rth(j-a)=15°C/W
Rth(j-a)=40°C/W
Fig.2: Average forward current versus ambient
temperature (δ=0.5,per diode).
Whenthe diodes1 and2are used simultaneously: Tj(diode1)= P(diode1)x Rth(j-c)(Per diode)+ P(diode2)x Rth(c)
STPS20H100CT/CF/CG/CG-11E-3 1E-2 1E-1 1E+00
t(s)
IM(A)
Tc=50°C
Tc=75°C
Tc=125°CIM
δ=0.5
Fig.3: Non repetitive surge peak forward current
versus overload duration (maximum values, per
diode) (TO-220AB,D2 PAK,I2 PAK)
1E-3 1E-2 1E-1 1E+00.0
tp(s)
Zth(j-c)/Rth(j-c)0.1
δ=0.2
δ=0.5
Singlepulse
δ=tp/T tp
Fig.5: Relative variationof thermal impedance
junctionto case versus pulse duration (per diode)
(TO-220AB,D2 PAK,I2 PAK). 102030405060708090 1001E-2
1E-1
1E+0
1E+1
1E+2
1E+3
1E+4
IR(μA)
VR(V)Tj=125°C
Tj=100°C
Tj=25°C
Tj=150°C
Fig.7: Reverse leakage current versus reverse
voltage applied (typical values,per diode). 2 5 10 20 50 100100
VR(V)
C(pF)
F=1MHz
Tj=25°C
Fig.8: Junction capacitance versus reverse
voltage applied (typical values,per diode).
1E-3 1E-2 1E-1 1E+00
140
IM(A)δ=0.5
t(s)Tj=125°C
Tj=75°C
Tj=50°C
Fig.4: Non repetitive surge peak forward current
versus overload duration (maximum values,per
diode) (ISOWATT220AB).
1E-2 1E-1 1E+0 1E+10.0
1.0
Zth(j-c)/Rth(j-c)
tp(s)δ=0.10.2
δ=0.5
Singlepulse
Fig.6: Relative variationof thermal impedance
junctionto case versus pulse duration (per diode)
(ISOWATT220AB).
STPS20H100CT/CF/CG/CG-1
PACKAGE MECHANICAL DATATO-220AB
Dia
REF.
DIMENSIONS
Millimeters Inches
Min. Max. Min. Max. 4.40 4.60 0.173 0.181 1.23 1.32 0.048 0.051 2.40 2.72 0.094 0.107 0.49 0.70 0.019 0.027 0.61 0.88 0.024 0.034 1.14 1.70 0.044 0.066 1.14 1.70 0.044 0.066 4.95 5.15 0.194 0.202 2.40 2.70 0.094 0.106 10 10.40 0.393 0.409 16.4 typ. 0.645typ. 13 14 0.511 0.551 2.65 2.95 0.104 0.116 15.25 15.75 0.600 0.620 6.20 6.60 0.244 0.259 3.50 3.93 0.137 0.154 2.6typ. 0.102typ.
Diam. 3.75 3.85 0.147 0.151
0.0 0.2 0.4 0.6 0.8 1.0 1.20.1
100.0
IFM(A)Tj=125°C
Typicalvalues
Tj=125°C
Tj=25°C
Tj=150°C
Typicalvalues
VFM(V)
Fig.9: Forward voltage drop versus forward
current (maximum values,per diode). 5 10 15 20 25 30 35 400
S(Cu) (cm )
Rth(j-a) (°C/W)
Fig. 10: Thermal resistance junctionto ambient
versus coppersurfaceundertab(Epoxyprintedcircuit
boardFR4, copperthickness: 35μm)(D2 PAK).
STPS20H100CT/CF/CG/CG-1
PACKAGE MECHANICAL DATAISOWATT220AB
REF.
DIMENSIONS
Millimeters Inches
Min. Max. Min. Max. 4.40 4.60 0.173 0.181 2.50 2.70 0.098 0.106 2.50 2.75 0.098 0.108 0.40 0.70 0.016 0.028 0.75 1.00 0.030 0.039 1.15 1.70 0.045 0.067 1.15 1.70 0.045 0.067 4.95 5.20 0.195 0.205 2.40 2.70 0.094 0.106 10.00 10.40 0.394 0.409 16.00 typ. 0.630typ. 28.60 30.60 1.125 1.205 9.80 10.60 0.386 0.417 15.90 16.40 0.626 0.646 9.00 9.30 0.354 0.366
Diam 3.00 3.20 0.118 0.126
STPS20H100CT/CF/CG/CG-1
PACKAGE MECHANICAL DATA2 PAK
2.0 MIN.
FLAT ZONE
REF.
DIMENSIONS
Millimeters Inches
Min. Typ. Max. Min. Typ. Max. 4.30 4.60 0.169 0.181 2.49 2.69 0.098 0.106 0.03 0.23 0.001 0.009 0.70 0.93 0.027 0.037 1.25 1.40 0.049 0.055 0.45 0.60 0.017 0.024 1.21 1.36 0.047 0.054 8.95 9.35 0.352 0.368 10.00 10.28 0.393 0.405 4.88 5.28 0.192 0.208 15.00 15.85 0.590 0.624 1.27 1.40 0.050 0.055 1.40 1.75 0.055 0.069 0.40 0.016 0° 8° 0° 8°
FOOT PRINT DIMENSIONS(in millimeters)