STPS2045CFP ,POWER SCHOTTKY RECTIFIERSTPS2045CT/CF/CG/CFP®POWER SCHOTTKY RECTIFIERMAIN PRODUCT CHARACTERISTICSI 2x10AF(AV) A1KV 45 VRRMA ..
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STPS2045CR ,POWER SCHOTTKY RECTIFIERapplications.TO-220FPAB D PAKSTPS2045CFP STPS2045CGTable 2: Order CodesPart Number MarkingSTPS2045C ..
STPS2045CT ,POWER SCHOTTKY RECTIFIERSTPS2045CT/CF/CG/CFP®POWER SCHOTTKY RECTIFIERMAIN PRODUCT CHARACTERISTICSI 2x10AF(AV) A1KV 45 VRRMA ..
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T1107 , TELECOMMUNICATIONS PRODUCTS
T1108 , TELECOMMUNICATIONS PRODUCTS
T1108 , TELECOMMUNICATIONS PRODUCTS
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STPS2045CF-STPS2045CFP-STPS2045CG-STPS2045CT-STPS2045CT..
POWER SCHOTTKY RECTIFIER
STPS2045CT/CF/CG/CFPAugust 2002-Ed:3E
POWER SCHOTTKY RECTIFIER
MAIN PRODUCT CHARACTERISTICS VERY SMALL CONDUCTION LOSSES NEGLIGIBLE SWITCHING LOSSES EXTREMELY FAST SWITCHING INSULATED PACKAGE: ISOWATT220AB,
TO-220FPAB
Insulating voltage= 2000VDC
Capacitance= 12pF
FEATURES AND BENEFITSDual center tap Schottky rectifier suited for
SwitchMode Power Supply and high frequencyDCDC converters.
Packaged eitherin TO-220AB, ISOWATT220AB,
TO-220FPABorD2 PAK, this deviceis especially
intendedfor usein low voltage, high frequency
inverters, free wheeling and polarity protection
applications.
DESCRIPTION
ABSOLUTE RATINGS (limiting values,per diode) dPtot
dTj Rthja< − thermal runaway conditionfora diodeonits own heatsink
STPS2045CT/CF/CG/CFPWhenthe diodes1 and2are used simultaneously:Tj (diode1)=P (diode1)x Rth(j-c) (per diode)+P (diode2)x Rth(c)
THERMAL RESISTANCES
STATIC ELECTRICAL CHARACTERISTICS (Per diode)
Pulsetest:*tp=380μs,δ <2% evaluatethe conduction lossesusethe following equation:
P=0.42xIF(AV)+ 0.015IF2 (RMS)
STPS2045CT/CF/CG/CFP1E-3 1E-2 1E-1 1E+00
IM(A)
Fig. 3-1: Non repetitive surge peak forward current
versus overload duration (maximum values, per
diode) (TO-220AB andD2 PAK).
1E-4 1E-3 1E-2 1E-1 1E+00.0
Zth(j-c)/Rth(j-c)
Fig. 4-1: Relative variationof thermal transient
impedance junctionto case versus pulse duration
(TO-220AB andD2 PAK). 25 50 75 100 125 150 1750
IF(av)(A)
Fig. 2: Average current versus ambient
temperature (δ=0.5,per diode).
1E-3 1E-2 1E-1 1E+00
IM(A)
Fig. 3-2: Non repetitive surge peak forward current
versus overload duration (maximum values, per
diode) (ISOWATT220AB, TO-220FPAB).
1E-3 1E-2 1E-1 1E+0 1E+10.0
Zth(j-c)/Rth(j-c)
Fig. 4-2: Relative variationof thermal transient
impedance junctionto case versus pulse duration
(ISOWATT220AB, TO-220FPAB).123456789 1011120
PF(av)(W)
Fig.1: Average forward power dissipation versus
average forward current (per diode).
STPS2045CT/CF/CG/CFP 5 10 15 20 25 30 35 40 451E-1
1E+0
1E+1
1E+2
1E+3
1E+4
5E+4
IR(μA)
Fig.5: Reverse leakage current versus reverse
voltage applied (typical values,per diode). 5 10 20 50100
C(pF)
Fig.6: Junction capacitance versus reverse
voltage applied (typical values,per diode).
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.60.1
IFM(A)
Fig.7: Forward voltage drop versus forward
current (maximum values,per diode). 5 10 15 20 25 30 35 400
Rth(j-a) (°C/W)
Fig.8: Thermal resistance junctionto ambient
versus copper surface undertab (Epoxy printed
circuit board, copper thickness: 35μm).
STPS2045CT/CF/CG/CFP
PACKAGE MECHANICAL DATA2 PAK
FOOTPRINT DIMENSIONS (in millimeters)
STPS2045CT/CF/CG/CFP
PACKAGE MECHANICAL DATATO-220AB
PACKAGE MECHANICAL DATATO-220FPAB
