STPS20170CG-TR ,High Voltage Power Schottky RectifierFeaturesA2A2A1■ High reverse voltageKA1■ High junction temperature capability2D PAK■ Avalanche spec ..
STPS20170CT ,HIGH VOLTAGE POWER SCHOTTKY RECTIFIERFEATURES AND BENEFITS■ HIGH JUNCTION TEMPERATURE CAPABILITYA2K■ GOOD TRADE OFF BETWEEN LEAKAGEA1CUR ..
STPS2030CG ,LOW DROP POWER SCHOTTKY RECTIFIERapplications.ABSOLUTE RATINGS (limiting values, per diode)Symbol Parameter Value UnitV 30 VRRMRepet ..
STPS2030CT ,LOW DROP POWER SCHOTTKY RECTIFIERFEATURES AND BENEFITSA2A2Kn Very small conduction lossesA1A1n Negligible switching lossesTO-220AB2D ..
STPS2045CF ,POWER SCHOTTKY RECTIFIERSTPS2045CT/CF/CG/CFP®POWER SCHOTTKY RECTIFIERMAIN PRODUCT CHARACTERISTICSI 2x10AF(AV) A1KV 45 VRRMA ..
STPS2045CFP ,POWER SCHOTTKY RECTIFIERSTPS2045CT/CF/CG/CFP®POWER SCHOTTKY RECTIFIERMAIN PRODUCT CHARACTERISTICSI 2x10AF(AV) A1KV 45 VRRMA ..
T1106NL , TELECOMMUNICATIONS PRODUCTS
T1107 , TELECOMMUNICATIONS PRODUCTS
T1108 , TELECOMMUNICATIONS PRODUCTS
T1108 , TELECOMMUNICATIONS PRODUCTS
T1108NL , TELECOMMUNICATIONS PRODUCTS
T1111NL , TELECOMMUNICATIONS PRODUCTS
STPS20170CG-TR
High Voltage Power Schottky Rectifier
1/8
Table 1: Main Product Characteristics
STPS20170CHIGH VOLTAGE POWER SCHOTTKY RECTIFIER
REV. 2
June 2005
Features High reverse voltage High junction temperature capability Avalanche specification with derating curves
Benefits Can challenge bipolar ultrafast diodes with
better dynamic characteristics.
DescriptionDual center tap Schottky rectifier diode suited for
high frequency switched mode power supplies.
Table 2: Order Codes
STPS20170C
Table 3: Absolute Ratings (limiting values, per diode)
Table 4: Thermal Parameters
Table 5: Static Electrical Characteristics (per diode)Pulse test: * tp = 5 ms, δ < 2%
** tp = 380 µs, δ < 2%
To evaluate the conduction losses use the following equation: P = 0.64 x I F(AV) + 0.011 IF2 (RMS)
* :
When the diodes 1 and 2 are used simultaneously:
∆ Tj(diode 1) = P(diode 1) x R th(j-c) (Per diode) + P(diode 2) x R th(c)
STPS20170C3/8
Figure 1: Average forward power dissipation
versus average forward current (per diode)
Figure 2: Average forward current versus
ambient temperature (δ = 0.5, per diode)
Figure 3: Normalized avalanche power
derating versus pulse duration
Figure 4: Normalized avalanche power
derating versus junction temperature
Figure 5: Non repetitive surge peak forward
current versus overload duration (maximum
values, per diode) (TO-220AB, D2 PAK, I2 PAK)
Figure 6: Non repetitive surge peak forward
current versus overload duration (maximum
values, per diode) (TO-220FPAB)
STPS20170C
Figure 7: Relative variation of thermal
impedance junction to case versus pulse
duration
Figure 8: Reverse leakage current versus
reverse voltage applied (typical values, per
diode)
Figure 9: Junction capacitance versus reverse
voltage applied (typical values, per diode)
Figure 10: Forward voltage drop versus
forward current (per diode)
Figure 11: Thermal resistance junction to am-
bient versus copper surface under tab (epoxy
printed board FR4, Cu = 35µm) (D2 PAK)
STPS20170C5/8
Figure 12: D2 PAK Package Mechanical Data
Figure 13: Foot Print Dimensions (in millimeters)
STPS20170C
Figure 14: I2 PAK Package Mechanical Data
Figure 15: TO-220FPAB Package Mechanical Data
