STPS20150CFP ,HIGH VOLTAGE POWER SCHOTTKY RECTIFIERFEATURES AND BENEFITSA2A2KA1 A1n HIGH JUNCTION TEMPERATURE CAPABILITYn GOOD TRADE OFF BETWEEN LEAKA ..
STPS20150CG ,HIGH VOLTAGE POWER SCHOTTKY RECTIFIERSTPS20150CT/CG/CR/CFP®HIGH VOLTAGE POWER SCHOTTKY RECTIFIERMAIN PRODUCT CHARACTERISTICSA1KI 2x10AF( ..
STPS20150CR ,HIGH VOLTAGE POWER SCHOTTKY RECTIFIERFEATURES AND BENEFITSA2A2KA1 A1n HIGH JUNCTION TEMPERATURE CAPABILITYn GOOD TRADE OFF BETWEEN LEAKA ..
STPS20150CT ,HIGH VOLTAGE POWER SCHOTTKY RECTIFIERSTPS20150CT/CG/CR/CFP®HIGH VOLTAGE POWER SCHOTTKY RECTIFIERMAIN PRODUCT CHARACTERISTICSA1KI 2x10AF( ..
STPS20150CT. ,HIGH VOLTAGE POWER SCHOTTKY RECTIFIERSTPS20150CT/CG/CR/CFP®HIGH VOLTAGE POWER SCHOTTKY RECTIFIERMAIN PRODUCT CHARACTERISTICSA1KI 2x10AF( ..
STPS20150CT.. ,HIGH VOLTAGE POWER SCHOTTKY RECTIFIERFEATURES AND BENEFITSA2A2KA1 A1n HIGH JUNCTION TEMPERATURE CAPABILITYn GOOD TRADE OFF BETWEEN LEAKA ..
T1103 , TELECOMMUNICATIONS PRODUCTS
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STPS20150CFP-STPS20150CG-STPS20150CR-STPS20150CT-STPS20150CT.-STPS20150CT..
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER
STPS20150CT/CG/CR/CFPDecember 2002- Ed:5D
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER
MAIN PRODUCT CHARACTERISTICS HIGH JUNCTION TEMPERATURE CAPABILITY GOOD TRADE OFF BETWEEN LEAKAGE CUR-
RENT AND FORWARD VOLTAGE DROP LOW LEAKAGE CURRENT
FEATURES AND BENEFITSDual center tap schottky rectifier designed for
high frequency Switched Mode Power Sup-
plies.
DESCRIPTION
ABSOLUTE RATINGS (limiting values, per diode)
STPS20150CT/CG/CR/CFP
THERMAL RESISTANCESPulse test:* tp=5ms,δ <2%tp= 380μs,δ <2% evaluate the conduction losses use the following equation:
P=0.64xIF(AV)+ 0.011IF2 (RMS)
STATIC ELECTRICAL CHARACTERISTICS (per diode)
When the diodes1 and2 are used simultaneously:Δ Tj(diode1)= P(diode1)x Rth(j-c)(Per diode)+ P(diode2)x Rth(c)
012 34567 89 10 11 12
(W)F(AV)
Fig.1: Average forward power dissipation versus
average forward current (per diode). 25 50 75 100 125 150 175
(A)F(AV)
Fig.2: Average forward current versus ambient
temperature(δ= 0.5, per diode).
STPS20150CT/CG/CR/CFP1.E-03 1.E-02 1.E-01 1.E+00
(A)M
Fig. 3-1: Non repetitive surge peak forward cur-
rent versus overload duration (maximum values,
per diode). TO-220AB, I²PAK and D²PAK
1.E-03 1.E-02 1.E-01 1.E+00
Z/Rth(j-c) th(j-c)
Fig. 4-1: Relative variationof thermal impedance
junctionto case versus pulse duration. TO-220AB,
I²PAK and D²PAK 25 50 75 100 125 150
1E-1
1E+0
1E+1
1E+2
1E+3
1E+4
1E+5
(mA)R
Fig.5: Reverse leakage current versus reverse
voltage applied (typical values, per diode). 2 5 10 20 50 100 200
C(nF)
Fig.6: Junction capacitance versus reverse voltage
applied (typical values, per diode).
1.E-03 1.E-02 1.E-01 1.E+00
(A)M
Fig. 3-2: Non repetitive surge peak forward cur-
rent versus overload duration (maximum values,
per diode). TO-220FPAB
1.E-03 1.E-02 1.E-01 1.E+00 1.E+01
Z/Rth(j-c) th(j-c)
Fig. 4-2: Relative variationof thermal impedance
junction to case versus pulse duration.
TO-220FPAB
STPS20150CT/CG/CR/CFP0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
100.0
(A)FM
Fig.7: Forward voltage drop versus forward
current (per diode). 5 10 15 20 25 30 35 40
(°C/W)th(j-a)
Fig.8: Thermalresistance junctionto ambientversus
copper surfaceunder tab (Epoxy printed circuit board,= 35μm) (STPS20150CG only).
PACKAGE MECHANICAL DATA2 PAK
FOOT PRINT DIMENSIONS (in millimeters)
STPS20150CT/CG/CR/CFP
PACKAGE MECHANICAL DATATO-220AB
PACKAGE MECHANICAL DATA2 PAK
STPS20150CT/CG/CR/CFPInformation furnishedisbelieved tobeaccurateand reliable.However, STMicroelectronics assumesnoresponsibilityfor theconsequencesof
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implicationor otherwise underany patentor patent rightsof STMicroelectronics. Specifications mentionedinthis publicationare subjectto
change without notice. This publication supersedes and replacesall information previously supplied.
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http:// Epoxy meets UL94,V0
OTHER INFORMATION
PACKAGE MECHANICAL DATATO-220FPAB