STPS20120CR ,POWER SCHOTTKY RECTIFIERapplications aSTPS20120CT STPS20120CTmargin between the remaining voltages applied onSTPS20120CR ST ..
STPS20120CT ,POWER SCHOTTKY RECTIFIERFEATURES AND BENEFITS■ High junction temperature capability■ Avalanche rated■ Low leakage current A ..
STPS20120D ,Power Schottky Rectifierapplications a marginSTPS20120D STPS20120Dbetween the remaining voltages applied on thediode and th ..
STPS20150CFP ,HIGH VOLTAGE POWER SCHOTTKY RECTIFIERFEATURES AND BENEFITSA2A2KA1 A1n HIGH JUNCTION TEMPERATURE CAPABILITYn GOOD TRADE OFF BETWEEN LEAKA ..
STPS20150CG ,HIGH VOLTAGE POWER SCHOTTKY RECTIFIERSTPS20150CT/CG/CR/CFP®HIGH VOLTAGE POWER SCHOTTKY RECTIFIERMAIN PRODUCT CHARACTERISTICSA1KI 2x10AF( ..
STPS20150CR ,HIGH VOLTAGE POWER SCHOTTKY RECTIFIERFEATURES AND BENEFITSA2A2KA1 A1n HIGH JUNCTION TEMPERATURE CAPABILITYn GOOD TRADE OFF BETWEEN LEAKA ..
T1103 , TELECOMMUNICATIONS PRODUCTS
T1104 , TELECOMMUNICATIONS PRODUCTS
T1106NL , TELECOMMUNICATIONS PRODUCTS
T1107 , TELECOMMUNICATIONS PRODUCTS
T1108 , TELECOMMUNICATIONS PRODUCTS
T1108 , TELECOMMUNICATIONS PRODUCTS
STPS20120CR-STPS20120CT
POWER SCHOTTKY RECTIFIER
1/6
Table 1: Main Product Characteristics
STPS20120CPOWER SCHOTTKY RECTIFIER
REV. 1
Table 3: Absolute Ratings (limiting values, per diode)* : thermal runaway condition for a diode on its own heatsinkdPtot
dTj-- ------------- 1
Rthja–()---------- ---------------->
February 2005
FEATURES AND BENEFITS High junction temperature capability Avalanche rated Low leakage current Good trade-off between leakage current and
forward voltage drop
DESCRIPTIONDual center tap Schottky rectifier suited for high
frequency Switch Mode Power Supply.
Packaged in TO-220AB & I2 PAK, this device is
intended to be used in notebook & LCD adaptors,
desktop SMPS, providing in these applications a
margin between the remaining voltages applied on
the diode and the voltage capability of the diode.
Table 2: Order Codes
STPS20120C
Table 4: Thermal Parameters
Table 5: Static Electrical Characteristics (per diode)Pulse test: * tp = 5 ms, δ < 2%
** tp = 380 µs, δ < 2%
To evaluate the conduction losses use the following equation: P = 0.62 x IF(AV) + 0.012 IF2 (RMS)
When the diodes 1 and 2 are used simultaneously:j (diode 1) = P(diode 1) x R th(j-c) (per diode) + P(diode 2) x R th(c)
Figure 1: Average forward power dissipation
versus average forward current (per diode)
Figure 2: Average forward current versus
ambient temperature (δ = 0.5, per diode)STPS20120C3/6
Figure 3: Normalized avalanche power
derating versus pulse duration
Figure 4: Normalized avalanche power
derating versus junction temperature
Figure 5: Non repetitive surge peak forward
current versus overload duration (maximum
values, per diode)
Figure 6: Relative variation of thermal
impedance junction to ambient versus pulse
duration
Figure 7: Reverse leakage current versus
reverse voltage applied (typical values, per
diode)
Figure 8: Junction capacitance versus reverse
voltage applied (typical values, per diode)1000
STPS20120C
Figure 10: TO-220AB Package Mechanical Data
Figure 9: Forward voltage drop versus forward
current (per diode)
STPS20120C5/6
Figure 11: I2 PAK Package Mechanical Data
Table 6: Ordering Information Epoxy meets UL94, V0 Cooling method: by conduction (C) Recommended torque value: 0.8 m.N. Maximum torque value: 1.0 m.N.
Table 7: Revision History
STPS20120C. consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics.
All other names are the property of their respective owners
© 2005 STMicroelectronics - All rights reserved
STMicroelectronics group of companies - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan -
Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America
