STPS20100CT ,HIGH VOLTAGE POWER SCHOTTKY RECTIFIERABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Repetitive peak reverse voltage 100 VRRMI RMS ..
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STPS20100CT
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER
STPS20100CTHIGH VOLTAGE POWER SCHOTTKY RECTIFIER Negligible switching losses Low forward voltage drop Low capacitance High reverse avalanche surge capability
FEATURESHigh voltage dual Schottky rectifier suitedfor
switchmode power supplies and other power
converters. Packagedin TO-220AB, this device intendedfor usein medium voltage operation,
and particularly,in high frequency circuitries
where low switching losses and low noise are
required.
DESCRIPTION
MAIN PRODUCT CHARACTERISTICS dPtot
dTj Rthj a< − thermal runaway conditionfora diodeonits own heatsink
ABSOLUTE MAXIMUM RATINGS
STPS20100CTWhenthe diodes1 and2are used simultaneously:
Tj-Tc(diode 1)=P(diode1)x Rth(j-c)(Per diode)+ P(diode2)x Rth(c)
THERMAL RESISTANCESPulse test:*tp=5 ms, duty cycle<2%tp= 380μs, duty cycle<2% evaluatethe conduction losses usethe following equation:
P=0.55xIF(AV)+ 0.015xIF2 (RMS)
ELECTRICAL CHARACTERISTICS (Per diode)STATIC CHARACTERISTICS
012345 67891011121314150 F(av)(W)
Fig.1: Average forward power dissipation versus
average forward current. (Per diode)
25 50 75 100 1250
F(av)(A)I
Fig.2: Average current versus ambient
temperature. (duty cycle: 0.5) (Per diode)
STPS20100CT
0.001 0.01 0.1 10
180 M(A)
Fig.3: Non repetitive surge peak forward current
versus overload duration.
(Maximum values) (Per diode)
Fig.4: Relative variationof thermal transient
impedance junctionto case versus pulse duration.
10203040 5060708090 1000.001
IR(mA)
Fig.5: Reverse leakage current versus reverse
voltage applied. (Typical values) (Per diode)
110 100100
C(pF)
Fig.6: Junction capacitance versus reverse
voltage applied. (Typical values) (Per diode)
0.1 1 10 1000.0
VFM(V)
Fig.7: Forward voltage drop versus forward
current. (Maximum values) (Per diode)
STPS20100CTInformationfurnishedis believedtobe accurateandreliable. However,STMicroelectronicsassumesno responsibilityforthe consequencesof
useof suchinformation norfor anyinfringementof patents orother rightsofthird parties whichmayresultfromits use.No licenseisgrantedby
implicationor otherwise underany patentor patent rightsof STMicroelectronics. Specifications mentionedinthis publicationare subjectto
change withoutnotice.Thispublication supersedesand replacesall information previouslysupplied.
STMicroelectronics productsarenot authorizedforuseas critical componentsinlife support devicesor systems without express writtenap-
provalof STMicroelectronics.
TheSTlogoisa registered trademarkof STMicroelectronics 2002 STMicroelectronics- Printedin Italy-All rights reserved.
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PACKAGE MECHANICAL DATATO-220AB (JEDEC outline) Cooling method:by conduction(C) Recommended torque value: 0.55N.m. Maximum torque value: 0.7N.m. Epoxy meets UL94,V0
:
www.ic-phoenix.com
.