STPS20-100 ,HIGH VOLTAGE POWER SCHOTTKY RECTIFIERFEATURESn Negligible switching lossesn Low forward voltage dropn Low capacitanceA2Kn High reverse a ..
STPS20100CT ,HIGH VOLTAGE POWER SCHOTTKY RECTIFIERABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Repetitive peak reverse voltage 100 VRRMI RMS ..
STPS20120CR ,POWER SCHOTTKY RECTIFIERapplications aSTPS20120CT STPS20120CTmargin between the remaining voltages applied onSTPS20120CR ST ..
STPS20120CT ,POWER SCHOTTKY RECTIFIERFEATURES AND BENEFITS■ High junction temperature capability■ Avalanche rated■ Low leakage current A ..
STPS20120D ,Power Schottky Rectifierapplications a marginSTPS20120D STPS20120Dbetween the remaining voltages applied on thediode and th ..
STPS20150CFP ,HIGH VOLTAGE POWER SCHOTTKY RECTIFIERFEATURES AND BENEFITSA2A2KA1 A1n HIGH JUNCTION TEMPERATURE CAPABILITYn GOOD TRADE OFF BETWEEN LEAKA ..
T1103 , TELECOMMUNICATIONS PRODUCTS
T1104 , TELECOMMUNICATIONS PRODUCTS
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T1108 , TELECOMMUNICATIONS PRODUCTS
T1108 , TELECOMMUNICATIONS PRODUCTS
STPS20100-STPS20-100
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER
STPS20100CTHIGH VOLTAGE POWER SCHOTTKY RECTIFIER Negligible switching losses Low forward voltage drop Low capacitance High reverse avalanche surge capability
FEATURESHigh voltage dual Schottky rectifier suited for
switchmode power supplies and other power
converters. Packagedin TO-220AB, this device intended for usein medium voltage operation,
and particularly,in high frequency circuitries
where low switching losses and low noise are
required.
DESCRIPTION
MAIN PRODUCT CHARACTERISTICS dPtot
dTj Rthj a< − thermal runaway conditionfora diodeonits own heatsink
ABSOLUTE MAXIMUM RATINGS
STPS20100CTWhen the diodes1 and2 are used simultaneously:
Tj-Tc(diode 1)=P(diode1)x Rth(j-c)(Per diode)+ P(diode2)x Rth(c)
THERMAL RESISTANCESPulse test:*tp=5 ms, duty cycle<2%tp= 380 μs, duty cycle<2% evaluate the conduction losses use the following equation:
P=0.55xIF(AV)+ 0.015xIF2 (RMS)
ELECTRICAL CHARACTERISTICS (Per diode)STATIC CHARACTERISTICS
012345 6789 1011121314150 F(av)(W)
Fig.1: Average forward power dissipation versus
average forward current. (Per diode)
25 50 75 100 1250
F(av)(A)I
Fig. 2: Average current versus ambient
temperature. (duty cycle: 0.5) (Per diode)
STPS20100CT
0.001 0.01 0.1 10
180 M(A)
Fig.3: Non repetitive surge peak forward current
versus overload duration.
(Maximum values) (Per diode)
Fig.4: Relative variationof thermal transient
impedance junctionto case versus pulse duration.
10203040 5060708090 1000.001
IR(mA)
Fig.5: Reverse leakage current versus reverse
voltage applied. (Typical values) (Per diode)
110 100100
C(pF)
Fig.6: Junction capacitance versus reverse
voltage applied. (Typical values) (Per diode)
0.1 1 10 1000.0
VFM(V)
Fig.7: Forward voltage drop versus forward
current. (Maximum values) (Per diode)
STPS20100CTInformationfurnishedis believedtobe accurateandreliable. However,STMicroelectronicsassumesno responsibilityforthe consequencesof
useof suchinformation norfor anyinfringementof patents orother rightsof third parties whichmayresult fromits use.No licenseisgrantedby
implicationor otherwise underany patentor patent rightsof STMicroelectronics. Specifications mentionedinthis publicationare subjectto
change withoutnotice.Thispublication supersedesand replacesall information previouslysupplied.
STMicroelectronics productsarenot authorizedforuseas critical componentsinlife support devicesor systems without express writtenap-
provalof STMicroelectronics.
TheST logoisa registered trademarkof STMicroelectronics 2002 STMicroelectronics- Printedin Italy-All rights reserved.
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PACKAGE MECHANICAL DATATO-220AB (JEDEC outline) Cooling method:by conduction (C) Recommended torque value: 0.55N.m. Maximum torque value: 0.7N.m. Epoxy meets UL94,V0
:
www.ic-phoenix.com
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