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STPS1L30A-STPS1L30U
LOW DROP POWER SCHOTTKY RECTIFIER
STPS1L30A/UAugust 1999 - Ed: 4A
LOW DROP POWER SCHOTTKY RECTIFIER
MAIN PRODUCT CHARACTERISTICSVERY LOW FORWARD VOLTAGE DROP FOR
LESS POWER DISSIPATION
OPTIMIZED CONDUCTION/REVERSE LOSSES
TRADE-OFF WHICH MEANS THE HIGHEST
YIELD IN THE APPLICATIONS
SURFACE MOUNT MINIATURE PACKAGE
FEATURES AND BENEFITSSingle Schottky rectifier suited to Switched Mode
Power Supplies and high frequency DC to DC con-
verters, freewheel diode and integrated circuit
latch up protection.
Packaged in SMA and SMB, this device is espe-
cially intended for use in parallel with MOSFETs in
synchronous rectification.
DESCRIPTION
ABSOLUTE RATINGS (limiting values)* : dPtot
dTj < 1
Rth(j−a) thermal runaway condition for a diode on its own heatsink
1/5
THERMAL RESISTANCES
STATIC ELECTRICAL CHARACTERISTICSPulse test : * tp = 380 μs, δ < 2%
To evaluate the maximum conduction losses use the following equation :
P = 0.225 x IF(AV) + 0.075 IF2 (RMS)
0.0 0.2 0.4 0.6 0.8 1.0 1.20.00
PF(av)(W)
Fig. 1: Average forward power dissipation versus
average forward current. 25 50 75 100 125 1500.0
1.2
IF(av)(A)
Fig. 2: Average forward current versus ambient
temperature (δ=0.5).
1E-3 1E-2 1E-1 1E+00
IM(A)
Fig. 3-1: Non repetitive surge peak forward cur-rent versus overload duration (maximum values)
(SMA).
1E-3 1E-2 1E-1 1E+00
IM(A)
Fig. 3-2: Non repetitive surge peak forward cur-rent versus overload duration (maximum values)
(SMB).
STPS1L30A/U2/5
5 10 15 20 25 301E-31E-2
1E-1
1E+0
1E+1
1E+2
IR(mA)
Fig. 5: Reverse leakage current versus reverse
voltage applied (typical values). 5 10 20 3010
C(pF)
Fig. 6: Junction capacitance versus reverse
voltage applied (typical values).
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.70.10
IFM(A)
Fig. 7-1: Forward voltage drop versus forward cur-
rent (typical values, high level).
1E-2 1E-1 1E+0 1E+1 1E+2 5E+20.0
Zth(j-a)/Rth(j-a)
Fig. 4-1: Relative variation of thermal impedance
junction to ambient versus pulse duration (epoxy
printed circuit board, e(Cu)=35μm, recommended
pad layout) (SMB).
1E-2 1E-1 1E+0 1E+1 1E+2 5E+20.0
Zth(j-a)/Rth(j-a)
Fig. 4-2: Relative variation of thermal impedance
junction to ambient versus pulse duration (epoxy
printed circuit board, e(Cu)=35μm, recommended
pad layout) (SMA).
0.10 0.15 0.20 0.25 0.30 0.35 0.40 0.45 0.50 0.55 0.600.0
3.0
IFM(A)
Fig. 7-2: Forward voltage drop versus forward cur-rent (maximum values, low level).
STPS1L30A/U3/5
2 3 450Rth(j-a) (°C/W)
Fig. 8-2: Thermal resistance junction to ambient
versus copper surface under each lead (Epoxy
printed circuit board FR4, copper thickness: 35μm)
(SMA).
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.00
Rth(j-a) (°C/W)
Fig. 8-1: Thermal resistance junction to ambient
versus copper surface under each lead (Epoxy
printed circuit board FR4, copper thickness:
35μm) (SMB).
PACKAGE MECHANICAL DATASMA
FOOT PRINT DIMENSIONS (in millimeters)
STPS1L30A/U4/5
PACKAGE MECHANICAL DATASMB
FOOT PRINT DIMENSIONS (in millimeters). consequences of
use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by
implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change without notice. This publication supersedes and replaces all information previously supplied.
STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written ap-
proval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics
© 1999 STMicroelectronics - Printed in Italy - All rights reserved.
STMicroelectronics GROUP OF COMPANIES
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http://Band indicates cathode
Epoxy meets UL94,V0
STPS1L30A/U5/5
:
www.ic-phoenix.com
.
