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Partno	Mfg	Dc	Qty	Available	Descript
STPS160H100TV	ST	N/a	167	avai	Schottky Rectifier

STPS160H100TV ,Schottky RectifierFEATURES AND BENEFITSNEGLIGIBLE SWITCHING LOSSESHIGH JUNCTION TEMPERATURE CAPABILITYLOW LEAKAGE CUR ..
STPS160U ,POWER SCHOTTKY RECTIFIERapplications.ABSOLUTE RATINGS (limiting values)Symbol Parameter Value UnitVRRM Repetitive peak rev ..
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T11 ,Square Modular, Industrial Grade , contact sferRevision 04-Mar-0250T11Square Modular Cermet TrimmersVishay Sfernice

STPS160H100TV
Schottky Rectifier
STPS160H100TV
July 1999 - Ed: 2A
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER
MAIN PRODUCT CHARACTERISTICS
NEGLIGIBLE SWITCHING LOSSES
HIGH JUNCTION TEMPERATURE CAPABILITY
LOW LEAKAGE CURRENT
GOOD TRADE OFF BETWEEN LEAKAGE
CURRENT AND FORWARD VOLTAGE DROP
AVALANCHE RATED
LOW INDUCTION PACKAGE
INSULATED PACKAGE:
Insulating Voltage = 2500 V(RMS)
Capacitance = 45 pF
FEATURES AND BENEFITS
High voltage dual Schottky rectifier designed
for high frequency telecom and computer
Switched Mode Power Supplies and other
power converters.
Packaged in ISOTOP, this device is intended for
use in medium voltage operation, and particu-
larly, in high frequency circuitries where low
switching losses and low noise are required.
DESCRIPTION
ABSOLUTE RATINGS (limiting values, per diode)
* : dPtot
dTj < 1
Rth(j−a) thermal runaway condition for a diode on its own heatsink
1/4
THERMAL RESISTANCES
STATIC ELECTRICAL CHARACTERISTICS (per diode)
Pulse test : * tp = 5 ms, δ < 2%
** tp = 380 μs, δ < 2%
To evaluate the conduction losses use the following equation :
P = 0.56 x IF(AV) + 0.0015 x IF2(RMS) 20 40 60 80 1000
PF(av)(W)
Fig. 1: Average forward power dissipation versus
average forward current (per diode). 25 50 75 100 125 1500
IF(av)(A)
Fig. 2: Average forward current versus ambient
temperature (δ=0.5, per diode).
When the diodes 1 and 2 are used simultaneously : Δ Tj(diode 1) = P(diode1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c)
STPS160H100TV
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1E-3 1E-2 1E-1 1E+00
IM(A)
Fig. 3: Non repetitive surge peak forward current ver-
sus overload duration (maximum values, per diode). 1020 304050 60 708090 1001E-3
1E-2
1E-1
1E+0
1E+1
5E+1
IR(mA)
Fig. 5: Reverse leakage current versus reverse
voltage applied (typical values, per diode).
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.41
IFM(A)
Fig. 7: Forward voltage drop versus forward cur-
rent (maximum values, per diode).
1E-3 1E-2 1E-1 1E+0 5E+00.0
Zth(j-c)/Rth(j-c)
Fig. 4: Relative variation of thermal impedance
junction to case versus pulse duration (per diode). 2 5 10 20 50 1000.1
C(nF)
Fig. 6: Junction capacitance versus reverse volt-
age applied (typical values, per diode) .
STPS160H100TV
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. consequences of
use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by
implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change without notice. This publication supersedes and replaces all information previously supplied.
STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written ap-
proval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics
© 1999 STMicroelectronics - Printed in Italy - All rights reserved.
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PACKAGE MECHANICAL DATA
ISOTOPTM
Epoxy meets UL94,V0
Cooling method: C
Recommended torque value: 1.3 N.m.
Maximum torque value: 1.5 N.m.
STPS160H100TV
4/4
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