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STPS15L60CB-TR ,POWER SCHOTTKY RECTIFIERFEATURES AND BENEFITSn NEGLIGIBLE SWITCHING LOSSESn LOW FORWARD VOLTAGE DROPn LOW THERMAL RESISTANC ..
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T1092NL , TELECOMMUNICATIONS PRODUCTS
T1093 , T1/CEPT/ISDN-PRI TRANSFORMERS Dual Surface Mount, 1500 Vrms, Extended and Standard Temperature Range
T1094NL , TELECOMMUNICATIONS PRODUCTS
T1095 , T1/CEPT/ISDN-PRI TRANSFORMERS Dual Surface Mount, 1500 Vrms, Extended and Standard Temperature Range
T1096 , TELECOMMUNICATIONS PRODUCTS
T1096NL , TELECOMMUNICATIONS PRODUCTS
STPS15L60CB
POWER SCHOTTKY RECTIFIER
STPS15L60CBMarch 2002-Ed:1A
POWER SCHOTTKY RECTIFIER
Dual centertab Schottky rectifier suitedfor Switch
Mode Power Supply and high frequencyDCtoDC
converters.
Packagein DPAK,this deviceis intendedfor use low voltage, high frequency inverters,
free-wheeling and polarity protection applications.
DESCRIPTION Negligible switching losses Low forward voltage drop Low thermal resistance
FEATURES AND BENEFITS
ABSOLUTE RATINGS (limiting values,per diode)
MAIN PRODUCTS CHARACTERISTICS dPtot
dTj Rthj a< − thermal runaway conditionfora diodeonits own heatsink
STPS15L60CBPulsetest:*tp= 380μs,δ <2% evaluatethe conduction lossesusethe following equation:
P=0.32xIF(AV)+ 0.027IF2 (RMS)
STATIC ELECTRICAL CHARACTERISTICS (per diode)
Whenthe diodes1 and2are used simultaneously: Tj(diode1)= P(diode1)x Rth(j-c)(Per diode)+ P(diode2)x Rth(c)
THERMAL RESISTANCES
6.0 23 45 67 89 10
PF(av)(W)
Fig.1: Conduction losses versusaverage current.
25 50 75 100 125 150
IF(av)(A)
Fig.2: Average forward current versus ambient
temperature(δ= 0.5).
STPS15L60CB
1.E-03 1.E-02 1.E-01 1.E+00
IM(A)
Fig.3: Non repetitive surge peak forward current
versus overload duration (maximum values).
1.E-03
1.E-02
1.E-01
1.E+00
1.E+01
1.E+02
1.E+0351015202530354045505560
IR(mA)
Fig.5: Reverse leakage current versus reverse
voltage applied (typical values).
IFM(A)
Fig.7: Forwardvoltage dropversus forwardcurrent.
02468 10 12 14 16 18 20
Rth(j-a)(°C/W)
Fig.8: Thermal resistance junctionto ambient versus
copper surface undertab (epoxy printed board FR4,= 35μm).
1.E-03 1.E-02 1.E-01 1.E+00
Zth(j-c)/Rth(j-c)
Fig.4: Relative variationof thermal impedance
junctionto case versus pulse duration.
1000 10 100
C(pF)
Fig.6: Junction capacitance versus reverse voltage
applied (typical values).
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