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STPS15L30CB-TR
LOW DROP POWER SCHOTTKY RECTIFIER
STPS15L30CBJuly 2003-Ed:2A
LOW DROP POWER SCHOTTKY RECTIFIER
Dual center tab Schottky rectifier suited for switch
Mode Power Supply and high frequency DCto DC
converters.
Packagein DPAK, this deviceis intended for use low voltage, high frequency inverters,
free-wheeling and polarity protection applications.
DESCRIPTION VERY SMALL CONDUCTION LOSSES NEGLIGIBLE SWITCHING LOSSES EXTREMELY FAST SWITCHING LOW FORWARD VOLTAGE DROP HIGH AVALANCHE CAPABILITY LOW THERMAL RESISTANCE AVALANCHE CAPABILITY SPECIFIED
FEATURES AND BENEFITS
ABSOLUTE RATINGS (limiting values, per diode)
MAIN PRODUCTS CHARACTERISTICS dPtot
dTj Rthj a< − thermal runaway conditionfora diodeonits own heatsink
STPS15L30CBPulse test:*tp= 380μs,δ <2% evaluate the conduction losses use the following equation:
P=0.27xIF(AV)+ 0.016IF2 (RMS)
STATIC ELECTRICAL CHARACTERISTICS (per diode)
When the diodes1 and2 are used simultaneously:Δ Tj(diode1)= P(diode1)x Rth(j-c)(Per diode)+ P(diode2)x Rth(c)
THERMAL RESISTANCES
STPS15L30CB
4.5 23 45 67 89 10
PF(av)(W)
Fig.1: Conduction losses versus average current.
25 50 75 100 125 150
IF(av)(A)
Fig.2: Average forward current versus ambient
temperature(δ= 0.5).
1.2 25 50 75 100 125 150
P(t) (25°C)
ARMp
ARM
Fig.4: Normalized avalanche power derating
versus junction temperature.
0.10.01 1
0.1 100 1000
P(t) (1μs)
ARMp
ARM
Fig. 3: Normalized avalanche power derating
versus pulse duration.
1.E-03 1.E-02 1.E-01 1.E+00
IM(A)
Fig.5: Non repetitive surge peak forward current
versus overload duration (maximum values).
1.E-03 1.E-02 1.E-01 1.E+00
Zth(j-c)/Rth(j-c)
Fig.6: Relative variationof thermal impedance
junctionto case versus pulse duration.
STPS15L30CB
1.E-02
1.E-01
1.E+00
1.E+01
1.E+02
1.E+03 5 10 15 20 25 30
IR(mA)
Fig.7: Reverse leakage current versus reverse
voltage applied (typical values).
0.0 0.2 0.4 0.6 0.8 1.0 1.2
IFM(A)
Fig.9: Forwardvoltage dropversusforwardcurrent.
02468 10 12 14 16 18 20
Rth(j-a)(°C/W)
Fig. 10: Thermal resistance junctionto ambient ver-
sus copper surface under tab (epoxy printed board
FR4, Cu= 35μm).
10.0 10 100
C(nF)
Fig.8: Junction capacitance versus reverse voltage
applied (typical values).
:
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