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STPS0520ZST,STN/a10000avaiSCHOTTKY RECTIFIERS


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STPS0520Z
SCHOTTKY RECTIFIERS
STPS0520Z
January 2002-Ed:2B
SCHOTTKY RECTIFIERS VERY SMALL CONDUCTION LOSSES NEGLIGIBLE SWITCHING LOSSES EXTREMELY FAST SWITCHING
FEATURES AND BENEFITS

Single Schottky rectifier suited for switch mode
power supplies and high frequency DCto DC
converters.
Packagedin SOD-123, this deviceis intendedfor
usein low voltage, high frequency inverters, free
wheeling and polarity protection applications. Due the small sizeof the package this device fits
GSM and PCMCIA requirements.
DESCRIPTION
ABSOLUTE RATINGS
(limiting values) dPtot
dTj Rthj a< − thermal runaway conditionfora diodeonits own heatsink
MAIN PRODUCT CHARACTERISTICS
STPS0520Z
Pulse test:* tp=5ms,δ <2%tp= 380μs,δ <2% evaluate the maximum conduction losses use the following equation:
P=0.23xIF(AV) +0.18xIF2 (RMS)
STATIC ELECTRICAL CHARACTERISTICS

(*) Mountedon epoxy board with recommended Pad Layout.
(**)Mountedon epoxy board with 50mm2 copperarea.
THERMAL RESISTANCE
STPS0520Z
0.0 0.1 0.2 0.3 0.4 0.5 0.60.00
PF(av)(W)
Fig.1: Average forward power dissipation versus
average forward current 25 50 75 100 1250.0
IF(av)(A)
Fig.2: Average forward current versus ambient
temperature(δ= 0.5)
1E-3 1E-2 1E-1 1E+00.0
IM(A)
Fig.3: Non repetitive surge peak forward current
versus overload duration (maximum values).
1E-3 1E-2 1E-1 1E+0 1E+1 1E+21E-3
1E-2
1E-1
1E+0
Zth(j-a)/Rth(j-a)
Fig.4:
Relative variationof thermal impedance
junctionto ambient versus pulse duration (Epoxy
printed circuit board FR4 with recommended pad
layout). 2 4 6 8 1012 141618201E-3
1E-2
1E-1
1E+0
1E+1
2E+1
IR(mA)
Fig.5:
Reverse leakage current versus reverse
voltage applied (typical values). 25 50 75 100 1251E-1
1E+0
1E+1
1E+2
1E+3
IR[Tj] / IR[Tj=25°C]
Fig.6:
Relative variationof reverse leakage cur-
rent versus junction temperature (typical values).
STPS0520Z 5 10 2010
C(pF)
Fig.7: Junction capacitance versus reverse volt-
age applied (typical values).
0.0 0.1 0.2 0.3 0.4 0.50.0
IFM(A)
Fig. 8-1: Forward voltage drop versus forward cur-
rent (maximum values, low level)
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.10.1
IFM(A)
Fig. 8-2: Forward voltage drop versus forward cur-
rent (maximum values, high level) 2040 6080 100100
Rth(j-a) (°C/W)
Fig.9: Variationof thermal resistance junctionto
ambient versus copper surface under each lead
(Printed circuit board FR4, e(Cu)= 35μm).
STPS0520Z
Information furnishedisbelievedtobe accurateand reliable. However, STMicroelectronicsassumesno responsibilityforthe consequencesof
use ofsuch informationnor forany infringement ofpatentsor otherrightsofthirdpartieswhich may result fromitsuse. Nolicenseis grantedby
implicationor otherwise under any patentor patent rightsof STMicroelectronics. Specifications mentionedinthis publicationare subjectto
changewithout notice. This publication supersedesand replaces allinformation previously supplied.
STMicroelectronics productsarenot authorizedforuseas critical componentsinlife support devicesor systems without express writtenap-
provalof STMicroelectronics.
TheST logoisa registered trademarkof STMicroelectronics 2002 STMicroelectronics- Printedin Italy-All rights reserved.
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PACKAGE MECHANICAL DATA

SOD-123 Epoxy meets UL94, V0. Band indicates cathode.
MARKING
FOOTPRINT
(in millimeters)
:
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