STPR1020 ,ULTRA-FAST RECOVERY RECTIFIER DIODESapplications.ABSOLUTE MAXIMUM (limiting values, per diode)Symbol Parameter Value UnitRepetitive pea ..
STPR1020C ,ULTRA-FAST RECOVERY RECTIFIER DIODESapplications.ABSOLUTE MAXIMUM (limiting values, per diode)Symbol Parameter Value UnitRepetitive pea ..
STPR1020CB ,ULTRA-FAST RECOVERY RECTIFIER DIODESapplications.ABSOLUTE MAXIMUM (limiting values, per diode)Symbol Parameter Value UnitRepetitive pea ..
STPR1020CF ,ULTRA-FAST RECOVERY RECTIFIER DIODESapplications.ABSOLUTE MAXIMUM (limiting values, per diode)Symbol Parameter Value UnitRepetitive pea ..
STPR1020CF. ,ULTRA-FAST RECOVERY RECTIFIER DIODESapplications.ABSOLUTE MAXIMUM (limiting values, per diode)Symbol Parameter Value UnitRepetitive pea ..
STPR1020CF.. ,ULTRA-FAST RECOVERY RECTIFIER DIODESFEATURESSTPR1020CFPn SUITED FOR SMPSKn LOW LOSSESn LOW FORWARD AND REVERSE RECOVERYTIMEA2Kn HIGH SU ..
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STPR1020
ULTRA-FAST RECOVERY RECTIFIER DIODES
STPR1020CB/CG/CT/CF/CFP/CRULTRA-FAST RECOVERY RECTIFIER DIODES SUITED FOR SMPS LOW LOSSES LOW FORWARD AND REVERSE RECOVERY
TIME HIGH SURGE CURRENT CAPABILITY INSULATED PACKAGES: ISOWATT220AB/
TO-220FPAB
Insulation Voltage= 2000V DC
Capacitance=12pF
FEATURES
ABSOLUTE MAXIMUM (limiting values, per diode)
Dual center tap rectifier suited for Switched Mode
Power Supplies and high frequency DCto DC
converters.
Packagedin DPAK,D2 PAK,I2 PAK, TO-220AB,
TO-220FPABor ISOWATT220AB, this deviceis
intended for usein low voltage, high frequency
inverters, free wheeling and polarity protection
applications.
DESCRIPTION
MAIN PRODUCTS CHARACTERISTICS
STPR1020CB/CG/CT/CF/CFP/CRPulsetest:* tp=5ms,δ <2%tp= 380μs,δ <2% evaluate the conduction losses use the following equation:
P=0.78xIF(AV)+ 0.042xIF2 (RMS)
STATIC ELECTRICAL CHARACTERISTICS (per diode)
RECOVERY CHARACTERISTICSWhen diodes1 and2 are used simultaneously: Tj(diode1)= P(diode1)x Rth(j-c) (Per diode)+ P(diode2)x Rth(c)
THERMAL RESISTANCES
STPR1020CB/CG/CT/CF/CFP/CR0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.00
IM(A)
Fig.2: Peak currentversus form factor (perdiode).
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.00
PF(av)(W)
Fig.1: Average forward power dissipation versus
average forward current (per diode). 25 50 75 100 125 1500
IF(av)(A)
Fig. 3-1: Average forward current versus ambient
temperature (δ= 0.5, TO-220AB, DPAK,D2 PAK). 25 50 75 100 125 1500
IF(av)(A)
Fig. 3-2: Average forward current versus
ambient temperature(δ= 0.5, ISOWATT220AB,
TO-220FPAB).
1E-3 1E-2 1E-1 1E+00
IM(A)
Fig. 4-1: Non repetitive surge peak forward current
versus overload duration (TO-220AB, DPAK,2 PAK).
1E-3 1E-2 1E-1 1E+00
IM(A)
Fig. 4-2: Non repetitive surge peak forward current
versus overload duration (ISOWATT220AB).
STPR1020CB/CG/CT/CF/CFP/CR1E-3 1E-2 1E-1 1E+00
IM(A)
Fig. 4-3: Non repetitive surge peak forward current
versus overload duration (TO-220FPAB).
1E-3 1E-2 1E-1 1E+00.1
K=[Zth(j-c)/Rth(j-c)]
Fig. 5-1: Relative variationof thermal impedance
junctionto case versus pulse duration2 PAK, DPAK, TO-220AB).
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.00.1
IFM(A)
Fig. 6: Forward voltage drop versus forward
current (maximum values, per diode).
1E-2 1E-1 1E+0 1E+10.1
K=[Zth(j-c)/Rth(j-c)]
Fig. 5-2: Relative variationof thermal impedance
junctionto case versus pulse duration
(ISOWATT220AB, TO-220FPAB). 10 100 20010
C(pF)
Fig. 7: Junction capacitance versus reverse
voltage applied (typical values, per diode). 20 50 100 200 50010
Qrr(nC)
Fig.8: Reverse recovery charges versus dIF/dt
(per diode).
STPR1020CB/CG/CT/CF/CFP/CR 20 50 100 200 5000.1
IRM(A)
Fig. 9: Peak reverse recovery current versus
dIF/dt (per diode). 25 50 75 100 125 1500.25
Qrr;IRM [Tj] / Qrr;IRM [Tj=125°C]
Fig. 10: Dynamic parameters versus junction
temperature (per diode). 5 10 15 20 25 30 35 400
Rth(j-a) (°C/W)
Fig. 11: Thermal resistance junctionto ambient
versus copper surface under tab (Epoxy printed
circuit board FR4, copper thickness: 35μm).
STPR1020CB/CG/CT/CF/CFP/CR
PACKAGE MECHANICAL DATADPAK
FOOT PRINT(in milliteters)
DPAK