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STP9NK65Z -STP9NK65ZFP
N-CHANNEL 650V
1/10August 2002
STP9NK65Z
STP9NK65ZFPN-CHANNEL 650V- 1Ω- 6.4A TO-220/TO-220FP
Zener-Protected SuperMESH™Power MOSFET TYPICAL RDS(on)=1Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED GATE CHARGE MINIMIZED VERY LOW INTRINSIC CAPACITANCES VERY GOOD MANUFACTURING
REPEATIBILITY
DESCRIPTIONThe SuperMESH™ seriesis obtained through an
extreme optimizationof ST’s well established strip-
based PowerMESH™ layout.In additionto pushing
on-resistance significantly down, special careis tak-to ensurea very good dv/dt capability for the
most demanding applications. Such series comple-
ments ST full rangeof high voltage MOSFETs in-
cluding revolutionary MDmesh™ products.
APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING IDEAL FOR OFF-LINE POWER SUPPLIES,
ADAPTORS AND PFC LIGHTING
ORDERING INFORMATION
STP9NK65Z- STP9NK65ZFP2/10
ABSOLUTE MAXIMUM RATINGS) Pulse width limitedby safe operating area
(1)ISD ≤6.4A, di/dt ≤200A/μs, VDD≤ V(BR)DSS,Tj≤ TJMAX.
(*) Limited onlyby maximum temperature allowed
THERMAL DATA
AVALANCHE CHARACTERISTICS
GATE-SOURCE ZENER DIODE
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODESThe built-in back-to-back Zener diodes have specifically been designedto enhance not only the device’s
ESD capability, but alsoto make them safely absorb possible voltage transients that may occasionallybe
applied from gateto source.In this respect the Zener voltageis appropriateto achievean efficient and
cost-effective interventionto protect the device’s integrity. These integrated Zener diodes thus avoid the
usageof external components.
3/10
STP9NK65Z- STP9NK65ZFP
ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)
ON/OFF
DYNAMIC
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note:1. Pulsed: Pulse duration=300μs, duty cycle1.5%. Pulse width limitedby safe operating area. Cosseq.is definedasa constant equivalent capacitance givingthe same charging timeas Coss when VDS increases from0to 80%
VDSS.
STP9NK65Z- STP9NK65ZFP4/10
Safe Operating Area For TO-220FP
Output Characteristics
Safe Operating Area For TO-220
Thermal Impedance For TO-220
5/10
STP9NK65Z- STP9NK65ZFP
Normalized Gate Threshold Voltagevs Temp.
Transconductance
Capacitance VariationsGate Chargevs Gate-source Voltage
Normalized On Resistancevs Temperature
Static Drain-source On Resistance
STP9NK65Z- STP9NK65ZFP6/10
Maximum Avalanche Energyvs Temperature
Normalized BVDSSvs TemperatureSource-drain Diode Forward Characteristics
