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STP9NC60-STP9NC60FP
N-CHANNEL 600V
1/9February 2002
STP9NC60
STP9NC60FPN-CHANNEL 600V - 0.6Ω - 9A - TO-220/TO-220FP
PowerMesh™II MOSFET
(1)ISD ≤9A, di/dt ≤100A/μs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
(*) Limited only by Maximum Temperature Allowed TYPICAL RDS(on) = 0.6 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED
DESCRIPTIONThe PowerMESH™II is the evolution of the first
generation of MESH OVERLAY™. The layout re-
finements introduced greatly improve the Ron*area
figure of merit while keeping the device at the lead-
ing edge for what concerns swithing speed, gate
charge and ruggedness.
APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING SWITH MODE POWER SUPPLIES (SMPS) DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVER
ABSOLUTE MAXIMUM RATINGS(•)Pulse width limited by safe operating area
STP9NC60 / STP9NC60FP
THERMAL DATA
AVALANCHE CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)OFF (1)
DYNAMIC
3/9
STP9NC60 / STP9NC60FP
ELECTRICAL CHARACTERISTICS (CONTINUED)SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note:1. Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %. Pulse width limited by safe operating area.
Safe Operating Area for TO-220FPSafe Operating Area for TO-220
STP9NC60 / STP9NC60FP
Static Drain-source On ResistanceTransconductance
Output Characteristics Transfer Characteristics
Thermal Impedance for TO-220FPThermal Impedance for TO-220
5/9
STP9NC60 / STP9NC60FP
Normalized Gate Thereshold Voltage vs Temp. Normalized On Resistance vs Temperature
Capacitance VariationsGate Charge vs Gate-source Voltage
Source-drain Diode Forward Characteristics
STP9NC60 / STP9NC60FP
Fig. 5: Test Circuit For Inductive Load Switching
Fig. 4: Gate Charge test Circuit
Fig. 3: Switching Times Test Circuit For Resistive Load
