STP9NB50. ,N-CHANNEL 500VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitSTP9NB50 STP9NB50FPV Drain-source Voltage (V = 0 ..
STP9NB50FP ,N-CHANNEL ENHANCEMENT MODE POWERMESH MOSFETSTP9NB50STP9NB50FPN-CHANNEL 500V - 0.75 Ω - 8.6 A TO-220/TO-220FPPowerMesh™ MOSFETTYPE V R IDSS DS( ..
STP9NB60 ,N-CHANNEL 600VSTP9NB60STP9NB60FP®N - CHANNEL 600V - 0.7Ω - 9A TO-220/TO220FPPowerMESH™ MOSFETTYPE V R IDSS DS(on ..
STP9NB60FP ,N-CHANNEL 600VSTP9NB60STP9NB60FP®N - CHANNEL 600V - 0.7Ω - 9A TO-220/TO220FPPowerMESH™ MOSFETTYPE V R IDSS DS(on ..
STP9NC60 ,N-CHANNEL 600VSTP9NC60STP9NC60FPN-CHANNEL 600V - 0.6Ω - 9A - TO-220/TO-220FPPowerMesh™II MOSFETTYPE V R IDSS DS(o ..
STP9NC60FP ,N-CHANNEL 600VELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)OFFSymbol Parameter Test Condi ..
T0905 ,General-purpose VHF/UHF Power Amplifier (135 to 600 MHz)Applications Professional PhonesGeneral- Hands-free Sets ISM Band Application Wireless Infrastr ..
T0980 ,SiGe Transmit/Receive Front-end ICFeatures• Power Amplifier with High Power Added Efficient (PAE), P Typically 29 dBmout• Controlled ..
T1001NL , TELECOMMUNICATIONS PRODUCTS
T1005 , TELECOMMUNICATIONS PRODUCTS
T1006NL , TELECOMMUNICATIONS PRODUCTS
T1007 , TELECOMMUNICATIONS PRODUCTS
STP9NB50-STP9NB50.-STP9NB50FP
N-CHANNEL ENHANCEMENT MODE POWERMESH MOSFET
1/9May 2000
STP9NB50
STP9NB50FPN-CHANNEL 500V - 0.75 Ω - 8.6 A TO-220/TO-220FP
PowerMesh™ MOSFET TYPICAL RDS(on) = 0.75 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED
DESCRIPTIONUsing the latest high voltage MESH OVERLAY™
process, STMicroelectronics has designed an ad-
vanced family of power MOSFETs with outstanding
performances. The new patent pending strip layout
coupled with the Company’s proprieraty edge termi-
nation structure, gives the lowest RDS(on) per area,
exceptional avalanche and dv/dt capabilities and
unrivalled gate charge and switching characteris-
tics.
APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING SWITH MODE POWER SUPPLIES (SMPS) DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
ABSOLUTE MAXIMUM RATINGS(•)Pulse width limited by safe operating area
(1)ISD<9A, di/dt<200A/μ, VDD
STP9NB50/FP
THERMAL DATA
AVALANCHE CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF (1)
DYNAMIC
3/9
STP9NB50/FP
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note:1. Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %. Pulse width limited by safe operating area.
Safe Operating Area Safe Operating Area for TO-220FP
STP9NB50/FP
Static Drain-source On Resistance
Thermal Impedence for TO-220
Output Characteristics
Transconductance
5/9
STP9NB50/FP
Source-drain Diode Forward Characteristics
Capacitance Variations
Normalized On Resistance vs TemperatureNormalized Gate Threshold Voltage vs Temp.
STP9NB50/FP
Fig. 5: Test Circuit For Inductive Load Switching
Fig. 4: Gate Charge test Circuit
Fig. 3: Switching Times Test Circuit For
Resistive Load
