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STP90NF03L
N-CHANNEL 30V 0.0056 OHM 90A TO-220/I2PAK LOW GATE CHARGE STRIPFET POWER MOSFET
1/9April 2001
STP90NF03L
STB90NF03L-1N-CHANNEL 30V - 0.0056Ω - 90A TO-220/I2 PAK
LOW GATE CHARGE STripFET™ POWER MOSFET TYPICAL RDS(on) = 0.0056 Ω TYPICAL Qg = 35 nC @ 5V OPTIMAL RDS(on) x Qg TRADE-OFF CONDUCTION LOSSES REDUCED SWITCHING LOSSES REDUCED
DESCRIPTIONThis application specific Power Mosfet is the third
generation of STMicroelectronics unique “Single
Feature Size™” strip-based process. The resulting
transistor shows the best trade-off between on-re-
sistance and gate charge. When used as high and
low side in buck regulators, it gives the best perfor-
mance in terms of both conduction and switching
losses. This is extremely important for mother-
boards where fast switching and high efficiency are
of paramount importance.
APPLICATIONS SPECIFICALLY DESIGNED AND OPTIMISED
FOR HIGH EFFICIENCY CPU CORE DC/DC
CONVERTERS
ABSOLUTE MAXIMUM RATINGS(�) Pulse width limited by safe operating area
STP90NF03L/STB90NF03L-1
THERMAL DATA
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)OFF (1)
DYNAMIC
3/9
STP90NF03L/STB90NF03L-1
ELECTRICAL CHARACTERISTICS (CONTINUED)SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note:1. Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %. Pulse width limited by safe operating area.
Thermal ImpedenceSafe Operating Area
STP90NF03L/STB90NF03L-1
Gate Charge vs Gate-source Voltage Capacitance Variations
Transconductance Static Drain-source On Resistance
Output Characteristics
5/9
STP90NF03L/STB90NF03L-1
Source-drain Diode Forward Characteristics
Normalized On Resistance vs TemperatureNormalized Gate Thereshold Voltage vs Temp.
STP90NF03L/STB90NF03L-1
Fig. 5: Test Circuit For Inductive Load Switching
Fig. 4: Gate Charge test Circuit
Fig. 3: Switching Times Test Circuit For Resistive Load
