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STP90N55F4
N-channel 55 V, 0.0064 Ohm, 90 A TO-220 Power MOSFET
August 2011 Doc ID 022110 Rev 1 1/13
STP90N55F4N-channel 55 V, 0.0064 Ω , 90 A, TO-220 ripFET™ DeepGA TE™ Power MOSFET
Features Exceptional dv/dt capability Extremely low on-resistance RDS(on) 100% avalanche tested
Applications Switching applications
DescriptionThis device is an N-channel Power MOSFET
developed using ST’s STripFET™ DeepGATE™
technology. The device has a new gate structure
andis specially designed to minimize on-state
resistance to provide superior switching
performance.
Figure 1. Internal schematic diagram
Table 1. Device summary
Contents STP90N55F42/13 Doc ID 022110 Rev 1
Contents Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 42.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
STP90N55F4 Electrical ratings
Doc ID 022110 Rev 1 3/13
1 Electrical ratings
Table 2. Absolute maximum ratings Pulse width limited by safe operating area Starting Tj = 25 °C, ID= 32.5 A, VDD= 45 V
Table 3. Thermal data
Electrical characteristics STP90N55F4
4/13 Doc ID 022110 Rev 1
2 Electrical characteristics
(TCASE = 25 °C unless otherwise specified)
Table 4. On/off states
Table 5. Dynamic
Table 6. Switching times
STP90N55F4 Electrical characteristics
Doc ID 022110 Rev 1 5/13
Table 7. Source drain diode Pulse width limited by safe operating area. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%
Electrical characteristics STP90N55F4
6/13 Doc ID 022110 Rev 1
2.1 Electrical characteristics (curves)
Figure 2. Safe operating area Figure 3. Thermal impedance
Figure 4. Output characteristics Figure 5. Transfer characteristics
Figure 6. Normalized BVDSS vs temperature Figure 7. Static drain-source on resistance
STP90N55F4 Electrical characteristics
Doc ID 022110 Rev 1 7/13
Figure 8. Gate charge vs gate-source voltage Figure 9. Capacitance variations
Figure 10. Normalized on resistance vs
temperature
Figure 11. Normalized gate threshold voltage
vs temperature
Figure 12. Source-drain diode forward
characteristics
