STP80PF55 ,P-CHANNEL 55VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V = 0) 55 VDS GSV Drain- ..
STP85NF55 ,N-CHANNEL 55VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V = 0)55 VDS GSV Drain-g ..
STP85NF55L ,N-CHANNEL 55VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V = 0) 55 VDS GSV Drain- ..
STP8NA50 ,OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-INSTP8NA50STP8NA50FIN - CHANNEL ENHANCEMENT MODEFAST POWER MOS TRANSISTORTYPE V R IDSS DS(on) DSTP8NA ..
STP8NC50 ,N-CHANNEL 500VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitSTP(B)8NC50(-1) STP8NC50FPV Drain-source Voltage ..
STP8NC50FP ,N-CHANNEL 500VELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)OFFSymbol Parameter Test Condi ..
T0816-TCQ ,3Features Current-controlled Output Current Source, 3 Input Channels Low-power Consumption Output ..
T0820 ,4-channel laser driver with RF oscillatorFeatures• Current-controlled Output Current Source with 4 Input Channels• Low-power Consumption• Ou ..
T0905 ,General-purpose VHF/UHF Power Amplifier (135 to 600 MHz)Applications Professional PhonesGeneral- Hands-free Sets ISM Band Application Wireless Infrastr ..
T0980 ,SiGe Transmit/Receive Front-end ICFeatures• Power Amplifier with High Power Added Efficient (PAE), P Typically 29 dBmout• Controlled ..
T1001NL , TELECOMMUNICATIONS PRODUCTS
T1005 , TELECOMMUNICATIONS PRODUCTS
STP80PF55
P-CHANNEL 55V
1/6
PRELIMINARY DATAFebruary 2002
STP80PF55P-CHANNEL 55V - 0.016 Ω - 80A TO-220
STripFET™ II POWER MOSFET TYPICAL RDS(on) = 0.016 Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED APPLICATION ORIENTED
CHARACTERIZATION
DESCRIPTIONThis Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature Size™"
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a remark-
able manufacturing reproducibility.
APPLICATIONS MOTOR CONTROL DC-DC & DC-AC CONVERTERS
ABSOLUTE MAXIMUM RATINGS(•) Pulse width limited by safe operating area
(*) Current Limited by Package
Note: For the P-CHANNEL MOSFET actual polarity of voltages and
current has to be reversed
(1) ISD ≤ 40A, di/dt ≤ 300A/μs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX.
(2) Starting Tj = 25 oC, ID = 80A, VDD = 40V
INTERNAL SCHEMATIC DIAGRAM
STP80PF55
THERMAL DATA
ELECTRICAL CHARACTERISTICS (Tcase = 25 °C unless otherwise specified)OFF
ON (*)
DYNAMIC
3/6
STP80PF55SWITCHING ON (*)
SWITCHING OFF (*)
SOURCE DRAIN DIODE (*)
(*) Pulse width [ 300 μs, duty cycle 1.5 %.
(•) Pulse width limited by TJMAX
ELECTRICAL CHARACTERISTICS (continued)
STP80PF55
Fig. 1: Unclamped Inductive Load Test CircuitFig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform
Fig. 3: Switching Times Test Circuits For Resistive Load
Fig. 4: Gate Charge test Circuit
Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times
STP80PF55. consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is registered trademark of STMicroelectronics
2002 STMicroelectronics - All Rights Reserved
All other names are the property of their respective owners.
STMicroelectronics GROUP OF COMPANIES
Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco -
Singapore - Spain - Sweden - Switzerland - United Kingdom - United States.
http://
