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Partno	Mfg	Dc	Qty	Available	Descript
STP80NF70	ST	N/a	49000	avai	Power MOSFETs, N-Channel (>40V to 150V)

STP80NF70 ,Power MOSFETs, N-Channel (>40V to 150V)Electrical characteristics (T =25°C unless otherwise specified).CASETable 4. On/off statesSymbol Pa ..
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STP80NF70
Power MOSFETs, N-Channel (>40V to 150V)
June 2010 Doc ID 17610 Rev 1 1/13
STP80NF70
N-channel 68 V , 0.0082 Ω , 98 A, TO-220 ripFET™ II Power MOSFET
Features Exceptional dv/dt capability 100% avalanche tested
Application Switching applications
Description
The STP80NF70 is a N-channel Power MOSFET
realized with STMicroelectronics unique
STripFET™ process. It has specifically been
designed to minimize input capacitance and gate
charge. The device is therefore suitable in
advanced high-efficiency switching applications.
Figure 1. Internal schematic diagram

Table 1. Device summary
Contents STP80NF70
2/13 Doc ID 17610 Rev 1
Contents Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
STP80NF70 Electrical ratings
Doc ID 17610 Rev 1 3/13
1 Electrical ratings
Table 2. Absolute maximum ratings Pulse width limited by safe operating area. ISD ≤ 80 A, di/dt ≤ 300 A/µs, VDD ≤ V(BR)DSS, TJ ≤ TJMAX. Starting TJ = 25 o C, ID = 40 A, VDD = 34 V.
Table 3. Thermal data 1.6 mm from case for 10 sec.
Electrical characteristics STP80NF70
4/13 Doc ID 17610 Rev 1
2 Electrical characteristics
(TCASE=25°C unless otherwise specified).
Table 4. On/off states
Table 5. Dynamic Pulsed: pulse duration=300µs, duty cycle 1.5%.
Table 6. Switching times
STP80NF70 Electrical characteristics
Doc ID 17610 Rev 1 5/13
Table 7. Source drain diode Pulse width limited by safe operating area. Pulsed: pulse duration=300µs, duty cycle 1.5%
Electrical characteristics STP80NF70
6/13 Doc ID 17610 Rev 1
2.1 Electrical characteristics (curves)

Figure 2. Safe operating area Figure 3. Thermal impedance
Figure 4. Output characteristics Figure 5. Transfer characteristics
STP80NF70 Electrical characteristics
Doc ID 17610 Rev 1 7/13
Figure 6. Normalized BVDSS vs temperature Figure 7. Static drain-source on resistance
Figure 8. Gate charge vs gate-source voltage Figure 9. Capacitance variations
Figure 10. Normalized gate threshold voltage
vs temperature
Figure 11. Normalized on resistance vs
temperature