STP80NF55-08 ,N-CHANNEL 55VSTP80NF55-08STB80NF55-08 STB80NF55-08-12 2N-CHANNEL 55V - 0.0065 Ω - 80A D PAK/I PAK/TO-220STripFET ..
STP80NF55L-06 ,N-CHANNEL 55VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V = 0) 55 VDS GSV Drain- ..
STP80NF70 ,Power MOSFETs, N-Channel (>40V to 150V)Electrical characteristics (T =25°C unless otherwise specified).CASETable 4. On/off statesSymbol Pa ..
STP80NF75L ,N-CHANNEL 75VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V = 0)75 VDS GSV Drain-g ..
STP80NS04ZB ,N-CHANNEL CLAMPED 7.5MOHMABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V = 0) CLAMPED VDS GSV D ..
STP80PF55 ,P-CHANNEL 55VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V = 0) 55 VDS GSV Drain- ..
T0816 ,3-channel laser driver with RF oscillatorFeatures Current-controlled Output Current Source, 3 Input Channels Low-power Consumption Output ..
T0816-TCQ ,3Features Current-controlled Output Current Source, 3 Input Channels Low-power Consumption Output ..
T0820 ,4-channel laser driver with RF oscillatorFeatures• Current-controlled Output Current Source with 4 Input Channels• Low-power Consumption• Ou ..
T0905 ,General-purpose VHF/UHF Power Amplifier (135 to 600 MHz)Applications Professional PhonesGeneral- Hands-free Sets ISM Band Application Wireless Infrastr ..
T0980 ,SiGe Transmit/Receive Front-end ICFeatures• Power Amplifier with High Power Added Efficient (PAE), P Typically 29 dBmout• Controlled ..
T1001NL , TELECOMMUNICATIONS PRODUCTS
STP80NF55-08
N-CHANNEL 55V
1/11March 2002
STP80NF55-08
STB80NF55-08 STB80NF55-08-1N-CHANNEL 55V - 0.0065 Ω - 80A D2 PAK/I2 PAK/TO-220
STripFET™ II POWER MOSFET TYPICAL RDS(on) = 0.0065Ω LOW THRESHOLD DRIVE
DESCRIPTIONThis Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature Size™"
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a
remarkable manufacturing reproducibility.
APPLICATIONS SOLENOID AND RELAY DRIVERS MOTOR CONTROL, AUDIO AMPLIFIERS DC-DC CONVERTERS AUTOMOTIVE ENVIRONMENT
ABSOLUTE MAXIMUM RATINGS(•) Current limited by package
(••) Pulse width limited by safe operating area.
(1) Starting Tj = 25 oC, ID = 40A, VDD = 30V
INTERNAL SCHEMATIC DIAGRAM
STB80NF55-08/-1 STP80NF55-08
THERMAL DATA
ELECTRICAL CHARACTERISTICS (Tcase = 25 °C unless otherwise specified)OFF
ON (*)
DYNAMIC
3/11
STB80NF55-08/-1 STP80NF55-08SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
(*)Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %.
(•)Pulse width limited by safe operating area.
ELECTRICAL CHARACTERISTICS (continued)
STB80NF55-08/-1 STP80NF55-08 Transfer Characteristics
5/11
STB80NF55-08/-1 STP80NF55-08 .
Normalized Gate Threshold Voltage vs Temperature Normalized on Resistance vs Temperature .
STB80NF55-08/-1 STP80NF55-08
Fig. 1: Unclamped Inductive Load Test CircuitFig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform
Fig. 3: Switching Times Test Circuits For Resistive Load
Fig. 4: Gate Charge test Circuit
Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times
