STP80NF12 ,N-CHANNEL 120V-0.013OHM-80A TO-220/TO-247/TO-220FP/D2PAK STRIPFET II POWER MOSFETABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitSTB_P_W80NF12 STP80NF12FPV Drain-source Voltage ..
STP80NF55-06 ,NABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitSTB80NF55-06 STP80NF55-06FPSTP80NF55-06V Drain-s ..
STP80NF55-06FP ,N-CHANNEL 55VELECTRICAL CHARACTERISTICS (T = 25 °C unless otherwise specified)caseOFFSymbol Parameter Test Condi ..
STP80NF55-08 ,N-CHANNEL 55VSTP80NF55-08STB80NF55-08 STB80NF55-08-12 2N-CHANNEL 55V - 0.0065 Ω - 80A D PAK/I PAK/TO-220STripFET ..
STP80NF55L-06 ,N-CHANNEL 55VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V = 0) 55 VDS GSV Drain- ..
STP80NF70 ,Power MOSFETs, N-Channel (>40V to 150V)Electrical characteristics (T =25°C unless otherwise specified).CASETable 4. On/off statesSymbol Pa ..
T0806 ,3-channel laser driver with RF oscillator and 2 outputsApplications DVD-ROM with CD-RW Capability (Combo Drives)and 2 Outputs Combo Drives with CD and D ..
T0806 ,3-channel laser driver with RF oscillator and 2 outputsFeatures Current-controlled Output Current Source, 3 Input Channels Two Selectable Outputs for Gr ..
T0806-TCQ ,3 CHANNEL LASER DRIVER WITH RF OSCILLATOR AND 2 OUTPUTSFeatures Current-controlled Output Current Source, 3 Input Channels Two Selectable Outputs for Gr ..
T0816 ,3-channel laser driver with RF oscillatorFeatures Current-controlled Output Current Source, 3 Input Channels Low-power Consumption Output ..
T0816-TCQ ,3Features Current-controlled Output Current Source, 3 Input Channels Low-power Consumption Output ..
T0820 ,4-channel laser driver with RF oscillatorFeatures• Current-controlled Output Current Source with 4 Input Channels• Low-power Consumption• Ou ..
STP80NF12
N-CHANNEL 120V-0.013OHM-80A TO-220/TO-247/TO-220FP/D2PAK STRIPFET II POWER MOSFET
1/12March 2003
STB80NF12 STW80NF12
STP80NF12 STP80NF12FPN-CHANNEL 120V-0.013Ω-80A TO-220/TO-247/TO-220FP/D²PAK
STripFET™ II POWER MOSFET TYPICAL RDS(on) = 0.013Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED APPLICATION ORIENTED
CHARACTERIZATION SURFACE-MOUNTING D²PAK (TO-263)
POWER PACKAGE IN TUBE (NO SUFFIX) OR
IN TAPE & REEL (SUFFIX “T4”)
DESCRIPTIONThis MOSFET series realized with STMicroelectronics
unique STripFET process has specifically been designed
to minimize input capacitance and gate charge. It is
therefore suitable as primary switch in advanced high-
efficiency, high-frequency isolated DC-DC converters for
Telecom and Computer applications. It is also intended
for any applications with low gate drive requirements.
APPLICATIONS HIGH-EFFICIENCY DC-DC CONVERTERS UPS AND MOTOR CONTROL
ABSOLUTE MAXIMUM RATINGS(•) Pulse width limited by safe operating area.
(*) Limited by Package
(2) ISD ≤35A, di/dt ≤300A/μs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX.
(#) Refer to SOA for the max allovable currente values on FP-type
due to thermal resistance value.
(1) Starting Tj = 25 oC, ID = 40A, VDD = 45V
INTERNAL SCHEMATIC DIAGRAM
STB80NF12 STW80NF12 STP80NF12 STP80NF12FP
THERMAL DATA
ELECTRICAL CHARACTERISTICS (Tcase = 25 °C unless otherwise specified)OFF
ON (1)
DYNAMIC
3/12
STB80NF12 STW80NF12 STP80NF12 STP80NF12FPSWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
(*)Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %.
(•)Pulse width limited by safe operating area.
ELECTRICAL CHARACTERISTICS (continued)
STB80NF12 STW80NF12 STP80NF12 STP80NF12FPThermal Impedance Thermal Impedance for TO-220FP
5/12
STB80NF12 STW80NF12 STP80NF12 STP80NF12FPGate Charge vs Gate-source Voltage Capacitance Variations
Normalized Gate Threshold Voltage vs Temperature Normalized on Resistance vs Temperature
Fig. 3: Switching Times Test Circuits For Resistive Load
Fig. 4: Gate Charge test CircuitAnd Diode Recovery Times
