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STP80N70F4
N-channel 68 V, 8.2 mOhm typ., 85 A STripFET DeepGATE Power MOSFET in TO-220 package
December 2012 Doc ID 18377 Rev 2 1/12
STP80N70F4N-channel 68 V , 8.2 mΩ typ., 85 A ST ripFET™ DeepGA TE™
Power MOSFET in TO-220 package
Datasheet — production data
Features N-channel enhancement mode 100% avalanched rated Low gate charge Very low on-resistance
ApplicationSwitching applications
DescriptionThis device is an N-channel Power MOSFET
developed using ST’s STripFET™ DeepGATE™
technology. The device has a new gate structure
and is specially designed to minimize on-state
resistance to provide superior switching
performance.
Table 1. Device summary
Contents STP80N70F42/12 Doc ID 18377 Rev 2
Contents Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 42.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
STP80N70F4 Electrical ratings
Doc ID 18377 Rev 2 3/12
1 Electrical ratings
Table 2. Absolute maximum ratings Pulse width limited by safe operating area Starting Tj = 25 °C, ID= 35 A, VDD= 34 V
Table 3. Thermal data
Electrical characteristics STP80N70F4
4/12 Doc ID 18377 Rev 2
2 Electrical characteristics
(TCASE = 25 °C unless otherwise specified)
Table 4. On/off states
Table 5. Dynamic
Table 6. Switching times
STP80N70F4 Electrical characteristics
Doc ID 18377 Rev 2 5/12
Table 7. Source drain diode Pulse width limited by safe operating area. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%
Electrical characteristics STP80N70F4 Doc ID 18377 Rev 2
2.1 Electrical characteristics (curves)
Figure 2. Safe operating area Figure 3. Thermal impedance
Figure 4. Output characteristics Figure 5. Transfer characteristics
Figure 6. Normalized BVDSS vs temperature Figure 7. Static drain-source on-resistance
