STP7NK80ZFP ,N-CHANNEL 800VSTP7NK80Z - STP7NK80ZFPSTB7NK80Z - STB7NK80Z-12 2N-CHANNEL800V-1.5Ω - 5.2A TO-220/TO-220FP/I PAK/D ..
STP80N70F4 ,N-channel 68 V, 8.2 mOhm typ., 85 A STripFET DeepGATE Power MOSFET in TO-220 packageElectrical characteristics(T = 25 °C unless otherwise specified)CASE Table 4. On/off statesSymbol P ..
STP80NE03L , N - CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFET
STP80NE03L-06 ,NSTP80NE03L-06®N - CHANNEL ENHANCEMENT MODE" SINGLE FEATURE SIZE™ " POWER MOSFETTYPE V R IDSS DS(on) ..
STP80NE06-10 ,NSTP80NE06-10N - CHANNEL ENHANCEMENT MODE" SINGLE FEATURE SIZE™ " POWER MOSFETTYPE V R IDSS DS(on) D ..
STP80NF03 ,N-CHANNEL 30VELECTRICAL CHARACTERISTICS (T =25 C unless otherwisespecified)caseOFFSymbol Parameter Test Conditio ..
T0790 ,700 MHz to 2700 MHz Direct Quadrature ModulatorBlock Diagram 16BBQ-1BBQ+4 13LO+ RF+0°12590°LO- RF-8BBI+9BBI-Rev. 4555C–SIGE–11/03Pin Configuration ..
T0800-PJQ ,5-CHANNEL LASER DRIVER WITH RF OSCILLATOR AND 2 OUTPUTSFeatures• Current-controlled Output Current Source with 5 Input Channels 2 Selectable Outputs for ..
T0806 ,3-channel laser driver with RF oscillator and 2 outputsApplications DVD-ROM with CD-RW Capability (Combo Drives)and 2 Outputs Combo Drives with CD and D ..
T0806 ,3-channel laser driver with RF oscillator and 2 outputsFeatures Current-controlled Output Current Source, 3 Input Channels Two Selectable Outputs for Gr ..
T0806-TCQ ,3 CHANNEL LASER DRIVER WITH RF OSCILLATOR AND 2 OUTPUTSFeatures Current-controlled Output Current Source, 3 Input Channels Two Selectable Outputs for Gr ..
T0816 ,3-channel laser driver with RF oscillatorFeatures Current-controlled Output Current Source, 3 Input Channels Low-power Consumption Output ..
STP7NK80Z -STP7NK80ZFP
N-CHANNEL 800V
1/13August 2002
STP7NK80Z- STP7NK80ZFP
STB7NK80Z- STB7NK80Z-1N-CHANNEL800V-1.5Ω - 5.2A TO-220/TO-220FP/I2 PAK/D2 PAK
Zener-Protected SuperMESH™Power MOSFET TYPICAL RDS(on)= 1.5Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED GATE CHARGE MINIMIZED VERY LOW INTRINSIC CAPACITANCES VERY GOOD MANUFACTURING
REPEATIBILITY
DESCRIPTIONThe SuperMESH™ seriesis obtained through an
extreme optimizationof ST’s well established strip-
based PowerMESH™ layout.In additionto pushing
on-resistance significantly down, special careis tak-to ensurea very good dv/dt capability for the
most demanding applications. Such series comple-
ments ST full rangeof high voltage MOSFETs in-
cluding revolutionary MDmesh™ products.
APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING SMPS FOR INDUSTRIAL APPLICATION. LIGHTING (PREHEATING)
ORDERING INFORMATION
STP7NK80Z- STP7NK80ZFP- STB7NK80Z- STB7NK80Z-12/13
ABSOLUTE MAXIMUM RATINGS) Pulse width limitedby safe operating area
(1)ISD ≤5.2A, di/dt ≤200A/μs, VDD≤ V(BR)DSS,Tj≤ TJMAX.
(*) Limited onlyby maximum temperature allowed
THERMAL DATA
AVALANCHE CHARACTERISTICS
GATE-SOURCE ZENER DIODE
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODESThe built-in back-to-back Zener diodes have specifically been designedto enhance not only the device’s
ESD capability, but alsoto make them safely absorb possible voltage transients that may occasionallybe
applied from gateto source.In this respect the Zener voltageis appropriateto achievean efficient and
cost-effective interventionto protect the device’s integrity. These integrated Zener diodes thus avoid the
usageof external components.
3/13
STP7NK80Z- STP7NK80ZFP- STB7NK80Z- STB7NK80Z-1
ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)
ON/OFF
DYNAMIC
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note:1. Pulsed: Pulse duration=300μs, duty cycle1.5%. Pulse width limitedby safe operating area. Cosseq.is definedasa constant equivalent capacitance givingthe same charging timeas Coss when VDS increases from0to 80%
VDSS.
STP7NK80Z- STP7NK80ZFP- STB7NK80Z- STB7NK80Z-14/13
Safe Operating Area For TO-220/D2PAK/I2PAK
Output Characteristics
Thermal Impedance For TO-220/D2PAK/I2PAK
Safe Operating Area For TO-220FP
Thermal Impedance For TO-220FP
Transfer Characteristics
5/13
STP7NK80Z- STP7NK80ZFP- STB7NK80Z- STB7NK80Z-1
Transconductance
Normalized Gate Threshold Voltagevs Temp. Normalized On Resistancevs Temperature
Gate Chargevs Gate-source Voltage Capacitance Variations
Static Drain-source On Resistance
STP7NK80Z- STP7NK80ZFP- STB7NK80Z- STB7NK80Z-16/13
Source-drain Diode Forward Characteristics
Maximum Avalanche Energyvs Temperature
Normalized BVDSSvs Temperature
7/13
STP7NK80Z- STP7NK80ZFP- STB7NK80Z- STB7NK80Z-1
Fig.5: Test Inductive
Fig.4: Gate Charge test Circuit
Fig.
Fig.3: Switching
Resistive Load
