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STP75NF75LSTN/a52avaiN-CHANNEL 75V


STP75NF75L ,N-CHANNEL 75VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V = 0) 75 VDS GSV Drain- ..
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STP75NF75L
N-CHANNEL 75V
1/11April 2002
STP75NF75L
STB75NF75L STB75NF75L-1

N-CHANNEL 75V - 0.009 Ω - 75A D2 PAK/I2 PAK/TO-220
STripFET™ II POWER MOSFET TYPICAL RDS(on) = 0.009Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED LOW THRESHOLD DRIVE
DESCRIPTION

This MOSFET series realized with STMicroelectronics
unique STripFET process has specifically been designed
to minimize input capacitance and gate charge. It is
therefore suitable as primary switch in advanced high-
efficiency, high-frequency isolated DC-DC converters for
Telecom and Computer applications. It is also intended
for any applications with low gate drive requirements.
APPLICATIONS
SOLENOID AND RELAY DRIVERS DC MOTOR CONTROL DC-DC CONVERTERS AUTOMOTIVE ENVIRONMENT
ABSOLUTE MAXIMUM RATINGS

(•) Current limited by package
(••) Pulse width limited by safe operating area.
(1) ISD ≤ 75A, di/dt ≤ 500A/μs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX.
(2) Starting Tj = 25 oC, ID = 37.5A, VDD = 30V
INTERNAL SCHEMATIC DIAGRAM
STB75NF75L/-1 STP75NF75L
THERMAL DATA
ELECTRICAL CHARACTERISTICS (Tcase = 25 °C unless otherwise specified)

OFF
ON (*)
DYNAMIC
3/11
STB75NF75L/-1 STP75NF75L

SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
(*)Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %.
(•)Pulse width limited by safe operating area.
ELECTRICAL CHARACTERISTICS (continued)
STB75NF75L/-1 STP75NF75L
5/11
STB75NF75L/-1 STP75NF75L
.
Normalized Gate Threshold Voltage vs Temperature Normalized on Resistance vs Temperature .
STB75NF75L/-1 STP75NF75L
Fig. 1: Unclamped Inductive Load Test CircuitFig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform
Fig. 3: Switching Times Test Circuits For Resistive

Load
Fig. 4: Gate Charge test Circuit
Fig. 5: Test Circuit For Inductive Load Switching

And Diode Recovery Times
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