STP75NE75 ,N-CHANNEL 75VSTP75NE75STP75NE75FP®N - CHANNEL 75V - 0.01Ω - 75A TO-220/TO-220FPSTripFET™ POWER MOSFETTYPE V R ..
STP75NF20 ,N-channel 200 V, 0.028 Ohm typ., 75 A STripFET(TM) Power MOSFET in TO-220 packageAbsolute maximum ratingsSymbol Parameter Value UnitV Drain-source voltage (V = 0) 200 VDS GSV Gate- ..
STP75NF68 , N-channel 68 V, 0.010 OHM, 80 A, TO-220 STripFET II Power MOSFET
STP75NF75 ,N-CHANNEL 75VELECTRICAL CHARACTERISTICS (T = 25 °C unless otherwise specified)caseOFFSymbol Parameter Test Condi ..
STP75NF75. ,N-CHANNEL 75VSTB75NF75STP75NF75 STP75NF75FPN-CHANNEL 75V - 0.0095 Ω - 80A TO-220/TO-220FP/D²PAKSTripFET™ II POWE ..
STP75NF75.. ,N-CHANNEL 75VAPPLICATIONS■ SOLENOID AND RELAY DRIVERS■ DC MOTOR CONTROL■ DC-DC CONVERTERS■ AUTOMOTIVE ENVIRONMENT
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STP75NE75
N-CHANNEL 75V
STP75NE75
STP75NE75FPN - CHANNEL 75V - 0.01Ω - 75A TO-220/TO-220FP
STripFET POWER MOSFET TYPICAL RDS(on) = 0.01 Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED APPLICATION ORIENTED
CHARACTERIZATION
DESCRIPTIONThis Power MOSFET is the latest development of
STMicroelectronics unique "Single Feature
Size" strip-based process. The resulting transi-
stor shows extremely high packing density for low
on-resistance, rugged avalanche characteristics
and less critical alignment steps therefore a re-
markable manufacturing reproducibility.
APPLICATIONS SOLENOID AND RELAY DRIVERS DC MOTOR CONTROL, AUDIO AMPLIFIERS DC-DC CONVERTERS AUTOMOTIVE ENVIRONMENT
ABSOLUTE MAXIMUM RATINGS(•) Pulse width limited by safe operating area (1) ISD ≤75 A, di/dt ≤ 300 A/μs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
May 1999
1/9
THERMAL DATA
AVALANCHE CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (Tcase = 25 o C unless otherwise specified)
OFF
ON (∗)
DYNAMIC
STP75NE75/FP2/9
ELECTRICAL CHARACTERISTICS (continued)SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
(∗) Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
Safe Operating Area for TO-220 Safe Operating Area for TO-220FP
STP75NE75/FP3/9
Thermal Impedance for TO-220
Output Characteristics
Transconductance
Thermal Impedance forTO-220FP
Transfer Characteristics
Static Drain-source On Resistance
STP75NE75/FP4/9
Gate Charge vs Gate-source Voltage
Normalized Gate Threshold Voltage vs
Temperature
Source-drain Diode Forward Characteristics
Capacitance Variations
Normalized On Resistance vs Temperature
STP75NE75/FP5/9
Fig. 1: Unclamped Inductive Load Test Circuit
Fig. 3: Switching Times Test Circuits For
Resistive Load
Fig. 2: Unclamped Inductive Waveform
Fig. 4: Gate Charge test Circuit
Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times
STP75NE75/FP6/9
