STP6NB80FP ,N-CHANNEL 800VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitSTP6NB80 STP6NB80FPV Drain-source Voltage (V = 0 ..
STP6NC60 ,N-CHANNEL 600V 1.0 OHMABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitSTP(B)6NC60(-1) STP6NC60FPV Drain-source Voltage ..
STP6NC60FP ,N-CHANNEL 600V 1.0 OHMSTP6NC60 - STP6NC60FPSTB6NC60-1N-CHANNEL 600V - 1Ω - 6A TO-220/TO-220FP/I2PAKPowerMESH™II MOSFETTYP ..
STP6NC60FP. ,N-CHANNEL 600V 1.0 OHMAPPLICATIONS■ HIGH CURRENT, HIGH SPEED SWITCHING■ SWITH MODE POWER SUPPLIES (SMPS)■ DC-AC CONVERTER ..
STP6NC80Z ,N-CHANNEL 800V 1.5OHM 5.4A TO-220/TO-220FP/D2PAK/I2PAK/ ZENER-PROTECTED POWERMESH III MOSFETELECTRICAL CHARACTERISTICS (CONTINUED)SWITCHING ONSymbol Parameter Test Conditions Min. Typ. Max. U ..
STP6NC80ZFP ,N-CHANNEL 800V 1.5OHM 5.4A TO-220/TO-220FP/D2PAK/I2PAK/ ZENER-PROTECTED POWERMESH III MOSFETABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitSTP(B)6NC80Z(-1) STP6NC80ZFPV Drain-source Volta ..
T0790 ,700 MHz to 2700 MHz Direct Quadrature ModulatorBlock Diagram 16BBQ-1BBQ+4 13LO+ RF+0°12590°LO- RF-8BBI+9BBI-Rev. 4555C–SIGE–11/03Pin Configuration ..
T0800-PJQ ,5-CHANNEL LASER DRIVER WITH RF OSCILLATOR AND 2 OUTPUTSFeatures• Current-controlled Output Current Source with 5 Input Channels 2 Selectable Outputs for ..
T0806 ,3-channel laser driver with RF oscillator and 2 outputsApplications DVD-ROM with CD-RW Capability (Combo Drives)and 2 Outputs Combo Drives with CD and D ..
T0806 ,3-channel laser driver with RF oscillator and 2 outputsFeatures Current-controlled Output Current Source, 3 Input Channels Two Selectable Outputs for Gr ..
T0806-TCQ ,3 CHANNEL LASER DRIVER WITH RF OSCILLATOR AND 2 OUTPUTSFeatures Current-controlled Output Current Source, 3 Input Channels Two Selectable Outputs for Gr ..
T0816 ,3-channel laser driver with RF oscillatorFeatures Current-controlled Output Current Source, 3 Input Channels Low-power Consumption Output ..
STP6NB80-STP6NB80FP
N-CHANNEL 800V
1/9June 2002
STP6NB80
STP6NB80FPN-CHANNEL 800V - 1.6Ω - 5.7A TO-220/TO-220FP
PowerMesh™ MOSFET TYPICAL RDS(on) = 1.6 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES
DESCRIPTIONUsing the latest high voltage MESH OVERLAY™
process, STMicroelectronics has designed an ad-
vanced family of power MOSFETs with outstanding
performances. The new patent pending strip layout
coupled with the Company’s proprieraty edge termi-
nation structure, gives the lowest RDS(on) per area,
exceptional avalanche and dv/dt capabilities and
unrivalled gate charge and switching characteris-
tics.
APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING UNINTERRUPTIBLE POWER SUPPLY (UPS) DC-DC & DC-AC CONVERTERS FOR
WELDING EQUIPMENT AND
UNINTERRUPTIBLE POWER SUPPLIES AND
MOTOR DRIVE
ABSOLUTE MAXIMUM RATINGS(•)Pulse width limited by safe operating area
(1)ISD ≤5.76A, di/dt ≤200A/μs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX.
(*)Limited only by maximum temperature allowed
STP6NB80 / STP6NB80FP
THERMAL DATA
AVALANCHE CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)OFF
ON (1)
DYNAMIC
3/9
STP6NB80 / STP6NB80FP
ELECTRICAL CHARACTERISTICS (CONTINUED)SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note:1. Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %. Pulse width limited by safe operating area.
Safe Operating Area for TO-220 Safe Operating Area for TO-220FP
STP6NB80 / STP6NB80FP
Transfer Characteristics
Transconductance Static Drain-source On Resistance
Thermal Impedence for TO-220
Output Characteristics
Thermal Impedence for TO-220FP
5/9
STP6NB80 / STP6NB80FP
Gate Charge vs Gate-source Voltage
Source-drain Diode Forward Characteristics
Normalized On Resistance vs TemperatureNormalized Gate Threshold Voltage vs Temp.
Capacitance Variations
STP6NB80 / STP6NB80FP
Fig. 5: Test Circuit For Inductive Load Switching
Fig. 4: Gate Charge test Circuit
Fig. 3: Switching Times Test Circuit For Resistive Load
