STP6N120K3 ,N-channel 1200 V, 1.95 Ohm, 6 A Zener-protected SuperMESH3(TM) Power MOSFET in TO-220 packageElectrical characteristics(T = 25 °C unless otherwise specified)CTable 4. On / off statesSymbol Par ..
STP6N62K3 ,N-channel 620 V, 0.95 Ohm typ., 5.5 A SuperMESH3(TM) Power MOSFET in TO-220 packageAbsolute maximum ratingsValueSymbol Parameter UnitTO-220FPI²PAK IPAKTO-220I²PAKFPV Drain-source vol ..
STP6NA60FI ,OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-INSTP6NA60STP6NA60FIN - CHANNEL ENHANCEMENT MODEFAST POWER MOS TRANSISTORTYPE V R IDSS DS(on) DSTP6NA ..
STP6NB25FP ,N-CHANNEL 250VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitSTP6NB25 STP6NB25FPV Drain-source Voltage (V = 0 ..
STP6NB50 ,N-CHANNEL ENHANCEMENT MODE POWERMESH MOSFETSTP6NB50STP6NB50FP®N - CHANNEL ENHANCEMENT MODEPowerMESH™ MOSFETTYPE V R IDSS DS(on) DSTP6NB50 500 ..
STP6NB50FP ,NSTP6NB50STP6NB50FP®N - CHANNEL ENHANCEMENT MODEPowerMESH™ MOSFETTYPE V R IDSS DS(on) DSTP6NB50 500 ..
T0790 ,700 MHz to 2700 MHz Direct Quadrature ModulatorBlock Diagram 16BBQ-1BBQ+4 13LO+ RF+0°12590°LO- RF-8BBI+9BBI-Rev. 4555C–SIGE–11/03Pin Configuration ..
T0800-PJQ ,5-CHANNEL LASER DRIVER WITH RF OSCILLATOR AND 2 OUTPUTSFeatures• Current-controlled Output Current Source with 5 Input Channels 2 Selectable Outputs for ..
T0806 ,3-channel laser driver with RF oscillator and 2 outputsApplications DVD-ROM with CD-RW Capability (Combo Drives)and 2 Outputs Combo Drives with CD and D ..
T0806 ,3-channel laser driver with RF oscillator and 2 outputsFeatures Current-controlled Output Current Source, 3 Input Channels Two Selectable Outputs for Gr ..
T0806-TCQ ,3 CHANNEL LASER DRIVER WITH RF OSCILLATOR AND 2 OUTPUTSFeatures Current-controlled Output Current Source, 3 Input Channels Two Selectable Outputs for Gr ..
T0816 ,3-channel laser driver with RF oscillatorFeatures Current-controlled Output Current Source, 3 Input Channels Low-power Consumption Output ..
STP6N120K3
N-channel 1200 V, 1.95 Ohm, 6 A Zener-protected SuperMESH3(TM) Power MOSFET in TO-3PF package
November 2012 Doc ID 15572 Rev 3 1/17
STFW6N120K3, STP6N120K3,
STW6N120K3N-channel 1200 V , 1.95 Ω typ., 6 A SuperMESH3™
Power MOSFET in TO-3PF , TO-220 and TO-247 packages
Datasheet — production data
Features 100% avalanche tested Extremely large avalanche performance Gate charge minimized Very low intrinsic capacitances Zener-protected
Applications Switching applications
DescriptionThese SuperMESH3™ Power MOSFETs are the
result of improvements applied to
STMicroelectronics’ SuperMESH™ technology,
combined with a new optimized vertical structure.
These devices boast an extremely low on-
resistance, superior dynamic performance and
high avalanche capability, rendering them suitable
for the most demanding applications.
Table 1. Device summary
Contents STFW6N120K3, STP6N120K3, STW6N120K32/17 Doc ID 15572 Rev 3
Contents Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 42.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
STFW6N120K3, STP6N120K3, STW6N120K3 Electrical ratings
Doc ID 15572 Rev 3 3/17
1 Electrical ratings
Table 2. Absolute maximum ratings Pulse width limited by safe operating area
Table 3. Thermal data
Electrical characteristics STFW6N120K3, STP6N120K3, STW6N120K3
4/17 Doc ID 15572 Rev 3
2 Electrical characteristics
(TC = 25 °C unless otherwise specified)
Table 4. On / off states
Table 5. Dynamic Coss eq. time related is defined as a constant equivalent capacitance giving the same charging time as
Coss when VDS increases from 0 to 80% VDSS. Coss eq. energy related is defined as a constant equivalent capacitance giving the same stored energy as
Coss when VDS increases from 0 to 80% VDSS.
STFW6N120K3, STP6N120K3, STW6N120K3 Electrical characteristics
Doc ID 15572 Rev 3 5/17
The built-in back-to-back Zener diodes have specifically been designed to enhance not only
the device’s ESD capability, but also to make them safely absorb possible voltage transients
that may occasionally be applied from gate to source. In this respect the Zener voltage is
appropriate to achieve an efficient and cost-effective intervention to protect the device’s
integrity. These integrated Zener diodes thus avoid the usage of external components.
Table 6. Switching times on/off
Table 7. Source drain diode Pulse width limited by safe operating area. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%
Table 8. Gate-source Zener diode
Electrical characteristics STFW6N120K3, STP6N120K3, STW6N120K3
2.1 Electrical characteristics (curves)
Figure 2. Safe operating area for TO-3PF Figure 3. Thermal impedance for TO-3PF
Figure 4. Safe operating area for TO-220 Figure 5. Thermal impedance for TO-220
Figure 6. Safe operating area for TO-247 Figure 7. Thermal impedance for TO-247
STFW6N120K3, STP6N120K3, STW6N120K3 Electrical characteristics
Figure 8. Output characteristics Figure 9. Transfer characteristics
Figure 10. Normalized BVDSS vs temperature Figure 11. Static drain-source on-resistance
Figure 12. Output capacitance stored energy Figure 13. Capacitance variations
Electrical characteristics STFW6N120K3, STP6N120K3, STW6N120K3
Figure 14. Gate charge vs gate-source voltage Figure 15. Normalized on-resistance vs
temperature
Figure 16. Normalized gate threshold voltage
vs temperature
Figure 17. Maximum avalanche energy vs
temperature
Figure 18. Source-drain diode forward
characteristics
STFW6N120K3, STP6N120K3, STW6N120K3 Test circuits Test circuits
Figure 19. Switching times test circuit for
resistive load
Figure 20. Gate charge test circuit
Figure 21. Test circuit for inductive load
switching and diode recovery times
Figure 22. Unclamped inductive load test
circuit
Figure 23. Unclamped inductive waveform Figure 24. Switching time waveform
