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STP60NE10STN/a1avaiN-CHANNEL 100V


STP60NE10 ,N-CHANNEL 100VSTP60NE10STP60NE10FP®N - CHANNEL 100V - 0.016Ω - 60A TO-220/TO-220FPSTripFET™ POWER MOSFETTYPE V ..
STP60NF03L ,N-CHANNEL 30VELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)OFFSymbol Parameter Test Condi ..
STP60NF06 ,N-CHANNEL 60V 0.014 OHM 60A TO-220 STRIPFET POWER MOSFETSTP60NF06STP60NF06FPN-CHANNEL 60V - 0.014Ω - 60A TO-220/TO-220FPSTripFET™ POWER MOSFETTYPE V R IDSS ..
STP60NF06. ,N-CHANNEL 60V 0.014 OHM 60A TO-220 STRIPFET POWER MOSFETELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)OFFSymbol Parameter Test Condi ..
STP60NF06FP ,N-CHANNEL 60V 0.014 OHM 60A TO-220 STRIPFET POWER MOSFETABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitSTP60NF06 STP60NF06FPV Drain-source Voltage (V = ..
STP60NF06L ,N-CHANNEL 60V
T0-220 , Fit Rate / Equivalent Device Hours
T0-220 , Fit Rate / Equivalent Device Hours
T0790 ,700 MHz to 2700 MHz Direct Quadrature ModulatorBlock Diagram 16BBQ-1BBQ+4 13LO+ RF+0°12590°LO- RF-8BBI+9BBI-Rev. 4555C–SIGE–11/03Pin Configuration ..
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T0806 ,3-channel laser driver with RF oscillator and 2 outputsApplications DVD-ROM with CD-RW Capability (Combo Drives)and 2 Outputs Combo Drives with CD and D ..
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STP60NE10
N-CHANNEL 100V
STP60NE10
STP60NE10FP

N - CHANNEL 100V - 0.016Ω - 60A TO-220/TO-220FP
STripFET POWER MOSFET TYPICAL RDS(on) = 0.016 Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED APPLICATION ORIENTED
CHARACTERIZATION
DESCRIPTION

This Power MOSFET is the latest development of
STMicroelectronics unique "Single Feature
Size" strip-based process. The resulting transi-
stor shows extremely high packing density for low
on-resistance, rugged avalanche characteristics
and less critical alignment steps therefore a re-
markable manufacturing reproducibility.
APPLICATIONS
SOLENOID AND RELAY DRIVERS MOTOR CONTROL, AUDIO AMPLIFIERS DC-DC CONVERTERS AUTOMOTIVE ENVIRONMENT (INJECTION,
ABS, AIR-BAG, LAMPDRIVERS, Etc.)
ABSOLUTE MAXIMUM RATINGS

(•) Pulse width limited by safe operating area (1) ISD ≤ 60 A, di/dt ≤ 300 A/μs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
May 1999
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THERMAL DATA
AVALANCHE CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (Tcase = 25
o C unless otherwise specified)
OFF
ON (∗)
DYNAMIC
STP60NE10/FP

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ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
(∗) Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
Safe Operating Area for TO-220 Safe Operating Area for TO-220FP
STP60NE10/FP

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Thermal Impedance for TO-220
Output Characteristics
Transconductance
Thermal Impedance forTO-220FP
Transfer Characteristics
Static Drain-source On Resistance
STP60NE10/FP

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Gate Charge vs Gate-source Voltage
Normalized Gate Threshold Voltage vs
Temperature
Source-drain Diode Forward Characteristics
Capacitance Variations
Normalized On Resistance vs Temperature
STP60NE10/FP

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Fig. 1: Unclamped Inductive Load Test Circuit
Fig. 3: Switching Times Test Circuits For
Resistive Load
Fig. 2: Unclamped Inductive Waveform
Fig. 4: Gate Charge test Circuit
Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times
STP60NE10/FP

6/9
ic,good price


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