STP5NK90Z ,N-CHANNEL 900VAbsolute Maximum ratingsSymbol Parameter Value UnitSTP5NK90Z STF5NK90ZV Drain-source Voltage (V = 0 ..
STP60NE06-16FP ,N-CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFETSTP60NE06-16STP60NE06-16FPN - CHANNEL ENHANCEMENT MODE" SINGLE FEATURE SIZE™ " POWER MOSFETTYPE V R ..
STP60NE10 ,N-CHANNEL 100VSTP60NE10STP60NE10FP®N - CHANNEL 100V - 0.016Ω - 60A TO-220/TO-220FPSTripFET™ POWER MOSFETTYPE V ..
STP60NF03L ,N-CHANNEL 30VELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)OFFSymbol Parameter Test Condi ..
STP60NF06 ,N-CHANNEL 60V 0.014 OHM 60A TO-220 STRIPFET POWER MOSFETSTP60NF06STP60NF06FPN-CHANNEL 60V - 0.014Ω - 60A TO-220/TO-220FPSTripFET™ POWER MOSFETTYPE V R IDSS ..
STP60NF06. ,N-CHANNEL 60V 0.014 OHM 60A TO-220 STRIPFET POWER MOSFETELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)OFFSymbol Parameter Test Condi ..
T0-220 , Fit Rate / Equivalent Device Hours
T0-220 , Fit Rate / Equivalent Device Hours
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T0800-PJQ ,5-CHANNEL LASER DRIVER WITH RF OSCILLATOR AND 2 OUTPUTSFeatures• Current-controlled Output Current Source with 5 Input Channels 2 Selectable Outputs for ..
T0806 ,3-channel laser driver with RF oscillator and 2 outputsApplications DVD-ROM with CD-RW Capability (Combo Drives)and 2 Outputs Combo Drives with CD and D ..
T0806 ,3-channel laser driver with RF oscillator and 2 outputsFeatures Current-controlled Output Current Source, 3 Input Channels Two Selectable Outputs for Gr ..
STP5NK90Z
N-CHANNEL 900V
1/11October 2004
STP5NK90Z
STF5NK90ZN-CHANNEL 900V - 2Ω - 4.5A TO-220/TO-220FP
Zener-Protected SuperMESH™MOSFET
Rev. 2
STP5NK90Z - STF5NK90Z2/11
Table 3: Absolute Maximum ratings ) Pulse width limited by safe operating area
(1) ISD ≤4.5A, di/dt ≤200A/µs, V DD ≤ V(BR)DSS, Tj ≤ TJMAX.
(*) Limited only by maximum temperature allowed
Table 4: Thermal Data
Table 5: Avalanche Characteristics
Table 6: Gate-Source Zener Diode
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODESThe built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the
usage of external components.
3/11
STP5NK90Z - STF5NK90Z
ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)
Table 7: On /Off
Table 8: Dynamic
Table 9: Source Drain Diode (1) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
(2) Pulse width limited by safe operating area.
(3) Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS.
STP5NK90Z - STF5NK90Z4/11
Figure 3: Safe Operating Area For TO-220
Figure 4: Safe Operating Area For TO-220FP
Figure 5: Output Characteristics
Figure 6: Thermal Impedance For TO-220
Figure 7: Thermal Impedance For TO-220FP
Figure 8: Transfer Characteristics
5/11
STP5NK90Z - STF5NK90Z
Figure 9: Transconductance
Figure 10: Gate Charge vs Gate-source Voltage
Figure 11: Normalized Gate Threshold Voltage
vs Temperature
Figure 12: Static Drain-source On Resistance
Figure 13: Capacitance Variations
Figure 14: Normalized On Resistance vs Tem-
perature
STP5NK90Z - STF5NK90Z6/11
Figure 15: Source-Drain Forward Characteris-
tics
Figure 16: Normalized Breakdown Voltage vs
Temperature
Figure 17: Avalanche Energy vs Starting Tj
