STP5NK65Z ,N-CHANNEL 650V 1.5 OHM 5A TO-220 ZENER-PROTECTED SUPERMESH POWER MOSFETABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V = 0)650 VDS GSV Drain- ..
STP5NK65ZFP ,N-CHANNEL 650V 1.5 OHM 5A TO-220 ZENER-PROTECTED SUPERMESH POWER MOSFETABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V = 0)650 VDS GSV Drain- ..
STP5NK80Z ,N-CHANNEL 800V 1.9 OHM 4.3A TO-220/TO-220FP ZENER-PROTECTED SUPERMESH POWER MOSFETSTP5NK80Z - STP5NK80ZFPN-CHANNEL 800V - 1.9Ω - 4.3A TO-220/TO-220FPZener-Protected SuperMESH™Power ..
STP5NK80ZFP ,N-CHANNEL 800V 1.9 OHM 4.3A TO-220/TO-220FP ZENER-PROTECTED SUPERMESH POWER MOSFETFEATURES OF GATE-TO-SOURCE ZENER DIODESThe built-in back-to-back Zener diodes have specifically bee ..
STP5NK90Z ,N-CHANNEL 900VAbsolute Maximum ratingsSymbol Parameter Value UnitSTP5NK90Z STF5NK90ZV Drain-source Voltage (V = 0 ..
STP60NE06-16FP ,N-CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFETSTP60NE06-16STP60NE06-16FPN - CHANNEL ENHANCEMENT MODE" SINGLE FEATURE SIZE™ " POWER MOSFETTYPE V R ..
T0-220 , Fit Rate / Equivalent Device Hours
T0-220 , Fit Rate / Equivalent Device Hours
T0790 ,700 MHz to 2700 MHz Direct Quadrature ModulatorBlock Diagram 16BBQ-1BBQ+4 13LO+ RF+0°12590°LO- RF-8BBI+9BBI-Rev. 4555C–SIGE–11/03Pin Configuration ..
T0800-PJQ ,5-CHANNEL LASER DRIVER WITH RF OSCILLATOR AND 2 OUTPUTSFeatures• Current-controlled Output Current Source with 5 Input Channels 2 Selectable Outputs for ..
T0806 ,3-channel laser driver with RF oscillator and 2 outputsApplications DVD-ROM with CD-RW Capability (Combo Drives)and 2 Outputs Combo Drives with CD and D ..
T0806 ,3-channel laser driver with RF oscillator and 2 outputsFeatures Current-controlled Output Current Source, 3 Input Channels Two Selectable Outputs for Gr ..
STP5NK65Z
N-CHANNEL 650V 1.5 OHM 5A TO-220 ZENER-PROTECTED SUPERMESH POWER MOSFET
1/9April 2002
STP5NK65ZN-CHANNEL 650V - 1.5Ω - 5A TO-220
Zener-Protected SuperMESH™Power MOSFET TYPICAL RDS(on) = 1.5 Ω EXTREMELY HIGH dv/dt CAPABILITY IMPROVED ESD CAPABILITY 100% AVALANCHE RATED GATE CHARGE MINIMIZED VERY LOW INTRINSIC CAPACITANCES VERY GOOD MANUFACTURING
REPEATIBILITY
DESCRIPTIONThe SuperMESH™ series is obtained through an
extreme optimization of ST’s well established strip-
based PowerMESH™ layout. In addition to pushing
on-resistance significantly down, special care is tak-
en to ensure a very good dv/dt capability for the
most demanding applications. Such series comple-
ments ST full range of high voltage MOSFETs in-
cluding revolutionary MDmesh™ products.
APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING IDEAL FOR OFF-LINE POWER SUPPLIES,
ADAPTORS AND PFC
ORDERING INFORMATION
STP5NK65Z
ABSOLUTE MAXIMUM RATINGS ) Pulse width limited by safe operating area
(1) ISD ≤ 5A, di/dt ≤100 μA, VDD ≤ V(BR)DSS, Tj ≤ TJMAX.
(*) Limited only by maximum temperature allowed
THERMAL DATA
AVALANCHE CHARACTERISTICS
GATE-SOURCE ZENER DIODE
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODESThe built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to souce. In this respect the Zener voltage is appropriate to achieve an efficient and cost-
effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage
of external components.
3/9
STP5NK65Z
ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)ON/OFF
DYNAMIC
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note:1. Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %. Pulse width limited by safe operating area. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80%
VDSS.
STP5NK65Z
Safe Operating Area Thermal Impedance
Transconductance Static Drain-source On Resistance
Transfer CharacteristicsOutput Characteristics
5/9
STP5NK65Z
Gate Charge vs Gate-source Voltage
Normalized On Resistance vs Temperature
Normalized BVDSS vs Temperature
Normalized Gate Threshold Voltage vs Temp.
Source-drain Diode Forward Characteristics
STP5NK65Z
Maximum Avalanche Energy vs Temperature
