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STP5NC90Z |STP5NC90ZST N/a200avaiN-CHANNEL 900V 2.1 OHM 4.6A TO-220 TO-220FP I2PAK D2PAK ZENER-PROTECTED POWERMESH III MOSFET
STP5NC90ZFPSTMN/a30avaiN-CHANNEL 900V 2.1 OHM 4.6A TO-220 TO-220FP I2PAK D2PAK ZENER-PROTECTED POWERMESH III MOSFET


STP5NC90Z ,N-CHANNEL 900V 2.1 OHM 4.6A TO-220 TO-220FP I2PAK D2PAK ZENER-PROTECTED POWERMESH III MOSFETABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitSTP(B)5NC90Z(-1) STP5NC90ZFPV Drain-source Volta ..
STP5NC90ZFP ,N-CHANNEL 900V 2.1 OHM 4.6A TO-220 TO-220FP I2PAK D2PAK ZENER-PROTECTED POWERMESH III MOSFETELECTRICAL CHARACTERISTICS (CONTINUED)SWITCHING ONSymbol Parameter Test Conditions Min. Typ. Max. U ..
STP5NK100Z ,N-CHANNEL 1000VFeatures Figure 1: PackageTYPE V R I PwDSS DS(on) DSTF5NK100Z 1000 V < 3.7 Ω 3.5 A (*) 30 WSTP5NK10 ..
STP5NK40Z ,N-CHANNEL 400VSTP5NK40Z - STP5NK40ZFPSTD5NK40Z - STD5NK40Z-1N-CHANNEL 400V - 1.47Ω - 3A TO-220/TO-220FP/DPAK/IPAK ..
STP5NK40ZFP ,N-CHANNEL 400VFEATURES OF GATE-TO-SOURCE ZENER DIODESThe built-in back-to-back Zener diodes have specifically bee ..
STP5NK50Z ,N-CHANNEL 500VSTP5NK50Z - STP5NK50ZFPSTD5NK50Z - STD5NK50Z-1N-CHANNEL 500V-1.22Ω-4.4A TO-220/TO-220FP/DPAK/IPAKZe ..
T0-220 , Fit Rate / Equivalent Device Hours
T0-220 , Fit Rate / Equivalent Device Hours
T0790 ,700 MHz to 2700 MHz Direct Quadrature ModulatorBlock Diagram 16BBQ-1BBQ+4 13LO+ RF+0°12590°LO- RF-8BBI+9BBI-Rev. 4555C–SIGE–11/03Pin Configuration ..
T0800-PJQ ,5-CHANNEL LASER DRIVER WITH RF OSCILLATOR AND 2 OUTPUTSFeatures• Current-controlled Output Current Source with 5 Input Channels 2 Selectable Outputs for ..
T0806 ,3-channel laser driver with RF oscillator and 2 outputsApplications DVD-ROM with CD-RW Capability (Combo Drives)and 2 Outputs Combo Drives with CD and D ..
T0806 ,3-channel laser driver with RF oscillator and 2 outputsFeatures Current-controlled Output Current Source, 3 Input Channels Two Selectable Outputs for Gr ..


STP5NC90Z -STP5NC90ZFP
N-CHANNEL 900V 2.1 OHM 4.6A TO-220 TO-220FP I2PAK D2PAK ZENER-PROTECTED POWERMESH III MOSFET
1/13December 2002
STP5NC90Z- STP5NC90ZFP
STB5NC90Z- STB5NC90Z-1

N-CHANNEL 900V- 2.1Ω - 4.6A TO-220/FP/D²PAK/I²PAK
Zener-Protected PowerMESH™III MOSFET TYPICAL RDS(on)= 2.1Ω EXTREMELY HIGH dv/dt AND CAPABILITY GATE- SOURCE ZENER DIODES 100% AVALANCHE TESTED VERY LOW GATE INPUT RESISTANCE GATE CHARGE MINIMIZED
DESCRIPTION

The third generationof MESH OVERLAY™ Power
MOSFETs for very high voltage exhibits unsurpassed
on-resistance per unit area while integrating back-to-
back Zener diodes between gate and source. Such ar-
rangement gives extra ESD capability with higher rug-
gedness performanceas requestedbya large variety single-switch applications.
APPLICATIONS
SINGLE-ENDED SMPSIN MONITORS,
COMPUTER AND INDUSTRIAL APPLICATION WELDING EQUIPMENT
ABSOLUTE MAXIMUM RATINGS

(•)Pulse width limitedby safe operating area
(1)ISD ≤4.6A, di/dt ≤100A/μs, VDD≤ V(BR)DSS,Tj≤ TJMAX
(*).Limited onlyby maximum temperature allowed
STP5NC90Z- STP5NC90ZFP- STB5NC90Z- STB5NC90Z-1
2/13
THERMAL DATA
AVALANCHE CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
(TCASE=25°C UNLESS OTHERWISE SPECIFIED)
OFF (1)
DYNAMIC
3/13
STP5NC90Z- STP5NC90ZFP- STB5NC90Z- STB5NC90Z-1
ELECTRICAL CHARACTERISTICS
(CONTINUED)
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
GATE-SOURCE ZENER DIODE
Note:1. Pulsed: Pulse duration=300μs, duty cycle1.5%. Pulse width limitedby safe operating area. ΔVBV= αT(25°-T) BVGSO(25°)
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES

The built-in back-to-back Zener diodes have specifically been designedto enhance not only the device’s
ESD capability, but alsoto make them safely absorb possible voltage transients that may occasionally applied from gateto source.In this respect the Zener voltageis appropiateto achievean efficient and
cost-effective interventionto protect the device’s integrity. These integrated Zener diodes thus avoid the
usageof external components.
STP5NC90Z- STP5NC90ZFP- STB5NC90Z- STB5NC90Z-1
4/13
Output Characteristics
Thermal Impedance For TO-220/D²PAK/I²PAK
Safe Operating Area For TO-220FPSafe Operating Area For TO-220/D²PAK/I²PAK
5/13
STP5NC90Z- STP5NC90ZFP- STB5NC90Z- STB5NC90Z-1
Normalized On Resistancevs TemperatureNormalized Gate Threshold Voltagevs Temp.
Capacitance VariationsGate Chargevs Gate-source Voltage
Static Drain-source On ResistanceTransconductance
STP5NC90Z- STP5NC90ZFP- STB5NC90Z- STB5NC90Z-1
6/13
Source-drain Diode Forward Characteristics
7/13
STP5NC90Z- STP5NC90ZFP- STB5NC90Z- STB5NC90Z-1
Fig.5:
Test For Inductive
Fig.4:
Gate Charge test Circuit
Fig.3:
Switching
Resistive Load
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