STP5NB90 Fast Delivery |IC PHOENIX CO.,LIMITED

STP5NB90 ,NABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitSTP5NB90 STP5NB90FPV Drain-source Voltage (V =0) ..
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STP5NB90
N-CHANNEL 900V
STP5NB90
STP5NB90FP- CHANNEL 900V- 2.3 Ω - 5A- TO-220/TO-220FP
PowerMESH MOSFET
PRELIMINARY DATA TYPICAL RDS(on)= 2.3Ω EXTREMELY HIGH dv/dt CAPABILITY 100%AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED
DESCRIPTION
Using the latest high voltage MESH OVERLAY
process, STMicroelectronics has designed an
advanced family of power MOSFETs with
outstanding performances. The new patent
pending strip layout coupled with the Company’s
proprietary edge termination structure, gives the
lowest RDS(on) per area, exceptional avalanche
and dv/dt capabilities and unrivalled gate charge
and switching characteristics.
APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING UNINTERRUPTIBLE POWER SUPPLY(UPS) DC-DC& DC-AC CONVERTERS FOR
TELECOM, INDUSTRIAL AND CONSUMER
ENVIRONMENT
INTERNAL SCHEMATIC DIAGRAM
September 1998
TO-220 TO-220FP223
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
STP5NB90 STP5NB90FP
VDS Drain-source Voltage (VGS =0) 900 V
VDGR Drain- gate Voltage (RGS =20 kΩ) 900 V
VGS Gate-source Voltage ±30 V Drain Current (continuous)atTc =25o C5 5(*) A Drain Current (continuous)atTc =100o C3.1 3.1(*) A
IDM(•) Drain Current (pulsed) 20 20 A
Ptot Total DissipationatTc =25oC 125 40 W
Derating Factor 1.0 0.32 W/oC
dv/dt(1) Peak Diode Recovery voltage slope 4.5 4.5 V/ns
VISO Insulation Withstand Voltage (DC)  2000 V
Tstg Storage Temperature -65to 150 oC Max. Operating Junction Temperature 150 oC
(•) Pulsewidth limitedby safeoperating area (1)ISD ≤5 Α, di/dt ≤200 A/μs, VDD≤ V(BR)DSS,Tj≤ TJMAX
(*) Limited onlyby maximum temperatureallowed
TYPE VDSS RDS(on) ID
STP5NB90
STP5NB90FP
900V
900V
<2.5Ω
<2.5Ω
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THERMAL DATA
TO-220 TO220-FP
Rthj-case Thermal Resistance Junction-case Max 1 3.13 o C/W
Rthj-amb
Rthc-sink
Thermal Resistance Junction-ambient Max
Thermal Resistance Case-sink Typ
Maximum Lead Temperature For Soldering Purpose
300 C/W C/WC
AVALANCHE CHARACTERISTICS
Symbol Parameter Max Value Unit
IAR Avalanche Current, Repetitiveor Not-Repetitive 5 A
EAS Single Pulse Avalanche Energy
(startingTj =25oC,ID =IAR,VDD =50V)
318 mJ
ELECTRICAL CHARACTERISTICS (Tcase =25oC unless otherwisespecified)
OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V(BR)DSS Drain-source
Breakdown Voltage =250 μAVGS =0 900 V
IDSS Zero Gate Voltage
Drain Current (VGS =0)
VDS =Max Rating
VDS= Max Rating Tc =125oC
IGSS Gate-body Leakage
Current (VDS =0)
VGS= ± 30V ± 100 nA(∗)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
VGS(th) Gate Threshold
Voltage
VDS =VGS ID= 250 μA 345 V
RDS(on) Static Drain-source On
Resistance
VGS =10V ID= 2.5A 2.3 2.5 Ω
ID(on) On State Drain Current VDS >ID(on) xRDS(on)max
VGS =10V
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
gfs (∗)Forward
Transconductance
VDS >ID(on) xRDS(on)max ID =2.5A 2.5 4.1 S
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
VDS =25Vf=1 MHz VGS=0 1250
STP5NB90/FP
2/6
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol Parameter Test Conditions Min. Typ. Max. Unit
td(on)
Turn-on Time
Rise Time
VDD= 450V ID =2.5A =4.7 Ω VGS =10V
Qgs
Qgd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD =720V ID=5A VGS =10V 33 nC
SWITCHING OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
tr(Voff)
Off-voltage Rise Time
Fall Time
Cross-over Time
VDD= 720V ID=5A =4.7 Ω VGS =10V
SOURCE DRAIN DIODE
Symbol Parameter Test Conditions Min. Typ. Max. Unit
ISD
ISDM(•)
Source-drain Current
Source-drain Current
(pulsed)
VSD(∗) Forward On Voltage ISD =5A VGS =0 1.6 V
trr
Qrr
IRRM
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
ISD=5A di/dt= 100 A/μs
VDD= 100V Tj =150oC
(∗) Pulsed: Pulse duration= 300μs, duty cycle 1.5%
(•) Pulse width limitedby safe operating area
STP5NB90/FP
3/6
DIM. mm inch
MIN. TYP. MAX. MIN. TYP. MAX. 4.40 4.60 0.173 0.181 1.23 1.32 0.048 0.051 2.40 2.72 0.094 0.107 1.27 0.050 0.49 0.70 0.019 0.027 0.61 0.88 0.024 0.034 1.14 1.70 0.044 0.067 1.14 1.70 0.044 0.067 4.95 5.15 0.194 0.203 2.4 2.7 0.094 0.106 10.0 10.40 0.393 0.409 16.4 0.645 13.0 14.0 0.511 0.551 2.65 2.95 0.104 0.116 15.25 15.75 0.600 0.620 6.2 6.6 0.244 0.260 3.5 3.93 0.137 0.154
DIA. 3.75 3.85 0.147 0.151
Dia.
TO-220 MECHANICAL DATA
P011C
STP5NB90/FP
4/6
DIM. mm inch
MIN. TYP. MAX. MIN. TYP. MAX. 4.4 4.6 0.173 0.181 2.5 2.7 0.098 0.106 2.5 2.75 0.098 0.108 0.45 0.7 0.017 0.027 0.75 1 0.030 0.039 1.15 1.7 0.045 0.067 1.15 1.7 0.045 0.067 4.95 5.2 0.195 0.204 2.4 2.7 0.094 0.106 10 10.4 0.393 0.409 16 0.630 28.6 30.6 1.126 1.204 9.8 10.6 0.385 0.417 15.9 16.4 0.626 0.645 9 9.3 0.354 0.366 3 3.2 0.118 0.126 G
TO-220FP MECHANICAL DATA
STP5NB90/FP
5/6
Information furnishedis believedtobe accurate and reliable. However, STMicroelectronics assumesno responsibility forthe consequences useof such information norfor any infringementof patentsor other rightsof third parties which may result fromits use.No licenseis
grantedby implicationor otherwise under any patentor patent rightsof STMicroelectronics. Specification mentionedinthis publicationare
subjectto change without notice. This publication supersedes andreplacesall information previously supplied. STMicroelectronics products
arenot authorizedfor useas critical componentsinlife support devicesor systems without express written approvalof STMicroelectronics.
TheST logoisa registered trademarkof STMicroelectronics 1998 STMicroelectronics –Printed inItaly –All Rights Reserved
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STP5NB90/FP
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Partno	Mfg	Dc	Qty	Available	Descript
STP5NB90	ST	N/a	35	avai	N